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Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F13%3A00396642%21RIV14-MSM-67985882
rdf:type
skos:Concept n9:Vysledek
dcterms:description
The electrophoretic deposition (EPD) of nanoparticles (NPs) of the catalytic metal platinum (Pt) onto semiconductor wafers of indium phosphide (InP) from colloid solution in isooctane was studied at room temperature. The colloid solution for EPD was prepared by the chemical reduction of water solutions of the metal salts, confined to AOT reverse micelles in isooctane with hydrazine reducing agent. Four EPD-cast samples of Pt NPs were prepared on polished n-type InP wafers with varying times of deposition. The sheet density of Pt NPs varied from approximately 10% coverage of the substrate to 100% coverage of the substrate by several monolayers of Pt NPs, as observed by SEM. EPD was performed on a masked surface, enabling to make separated small deposited spots. Schottky contacts were made on the deposited spots by printing the contacts with colloidal graphite. The time response of the current to a 0.1% hydrogen exposure exhibited a continuous increase of saturation current and a decrease of the response time with increasing Pt NPs sheet density. Layers of Pt NPs were also prepared on p-type InP wafers. The current of the p-type InP diodes was observed to decrease with the exposure to hydrogen; its decrease was much smaller than the increase of current in n-type InP diodes. This demonstrates that two mechanisms are involved in formation of the hydrogen dipole layer. We have suggested the increase in hydrogen affinity by correlation effects as the second mechanism added to the well known hydrogen polarization by the electric field of the Schottky barrier. The electrophoretic deposition (EPD) of nanoparticles (NPs) of the catalytic metal platinum (Pt) onto semiconductor wafers of indium phosphide (InP) from colloid solution in isooctane was studied at room temperature. The colloid solution for EPD was prepared by the chemical reduction of water solutions of the metal salts, confined to AOT reverse micelles in isooctane with hydrazine reducing agent. Four EPD-cast samples of Pt NPs were prepared on polished n-type InP wafers with varying times of deposition. The sheet density of Pt NPs varied from approximately 10% coverage of the substrate to 100% coverage of the substrate by several monolayers of Pt NPs, as observed by SEM. EPD was performed on a masked surface, enabling to make separated small deposited spots. Schottky contacts were made on the deposited spots by printing the contacts with colloidal graphite. The time response of the current to a 0.1% hydrogen exposure exhibited a continuous increase of saturation current and a decrease of the response time with increasing Pt NPs sheet density. Layers of Pt NPs were also prepared on p-type InP wafers. The current of the p-type InP diodes was observed to decrease with the exposure to hydrogen; its decrease was much smaller than the increase of current in n-type InP diodes. This demonstrates that two mechanisms are involved in formation of the hydrogen dipole layer. We have suggested the increase in hydrogen affinity by correlation effects as the second mechanism added to the well known hydrogen polarization by the electric field of the Schottky barrier.
dcterms:title
Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts
skos:prefLabel
Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts
skos:notation
RIV/67985882:_____/13:00396642!RIV14-MSM-67985882
n9:predkladatel
n10:ico%3A67985882
n3:aktivita
n16:P n16:I
n3:aktivity
I, P(OC10021)
n3:cisloPeriodika
184
n3:dodaniDat
n6:2014
n3:domaciTvurceVysledku
n7:5077443
n3:druhVysledku
n17:J
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
79296
n3:idVysledku
RIV/67985882:_____/13:00396642
n3:jazykVysledku
n15:eng
n3:klicovaSlova
Metal nanoparticles; Keyed electrophoresis; Hydrogen sensors
n3:klicoveSlovo
n4:Metal%20nanoparticles n4:Keyed%20electrophoresis n4:Hydrogen%20sensors
n3:kodStatuVydavatele
CH - Švýcarská konfederace
n3:kontrolniKodProRIV
[D93AEEA399D0]
n3:nazevZdroje
Sensors and Actuators B - Chemical
n3:obor
n13:JB
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
2
n3:projekt
n8:OC10021
n3:rokUplatneniVysledku
n6:2013
n3:tvurceVysledku
Žďánský, Karel Dickerson, J. H.
n3:wos
000319869700041
s:issn
0925-4005
s:numberOfPages
6
n19:doi
10.1016/j.snb.2013.04.099