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Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F13%3A00395141%21RIV14-MSM-67985882
rdf:type
skos:Concept n9:Vysledek
dcterms:description
Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content. Fabrication of high-quality Schottky barriers on InP epitaxial layers prepared by liquid-phase epitaxy from rare-earth treated melts is reported. The Schottky structures are based on metal nanoparticles and a graphite layer deposited from colloidal solutions onto epitaxial layers with varying carrier concentration. The structures have notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi-level pinning. Electrical characteristics of these diodes are shown to be extremely sensitive to the exposure of gas mixtures with small hydrogen content.
dcterms:title
Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers
skos:prefLabel
Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers
skos:notation
RIV/67985882:_____/13:00395141!RIV14-MSM-67985882
n9:predkladatel
n10:ico%3A67985882
n3:aktivita
n8:I n8:P
n3:aktivity
I, P(LD12014)
n3:cisloPeriodika
4
n3:dodaniDat
n14:2014
n3:domaciTvurceVysledku
Yatskiv, Roman n16:2267659
n3:druhVysledku
n4:J
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
104090
n3:idVysledku
RIV/67985882:_____/13:00395141
n3:jazykVysledku
n11:eng
n3:klicovaSlova
Colloidal graphite; Epitaxial growth; Schottky barrier diodes
n3:klicoveSlovo
n5:Schottky%20barrier%20diodes n5:Epitaxial%20growth n5:Colloidal%20graphite
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[0DB9178B0E48]
n3:nazevZdroje
Semiconductor Science and Technology
n3:obor
n18:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:projekt
n17:LD12014
n3:rokUplatneniVysledku
n14:2013
n3:svazekPeriodika
28
n3:tvurceVysledku
Yatskiv, Roman Grym, Jan
n3:wos
000316345600006
s:issn
0268-1242
s:numberOfPages
5
n12:doi
10.1088/0268-1242/28/4/045006