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Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F13%3A00395132%21RIV14-MSM-67985882
rdf:type
skos:Concept n18:Vysledek
dcterms:description
The electrical properties of highly rectifying semimetal-graphite Schottky contacts fabricated by printing colloid graphite on n-type InP and GaN are investigated as a function of annealing temperature by current-voltage and capacitance-voltage techniques. As-deposited Schottky diodes exhibit excellent current-voltage rectifying characteristics of 7.5 107 and 1.9 1011 with Schottky barrier height of 1.13 and 1.29 eV at room temperature for InP and GaN, respectively. The key aspect of this technique, compared with conventional vacuum evaporation, is low deposition energy process, leaving the surface undisturbed. The electrical properties of highly rectifying semimetal-graphite Schottky contacts fabricated by printing colloid graphite on n-type InP and GaN are investigated as a function of annealing temperature by current-voltage and capacitance-voltage techniques. As-deposited Schottky diodes exhibit excellent current-voltage rectifying characteristics of 7.5 107 and 1.9 1011 with Schottky barrier height of 1.13 and 1.29 eV at room temperature for InP and GaN, respectively. The key aspect of this technique, compared with conventional vacuum evaporation, is low deposition energy process, leaving the surface undisturbed.
dcterms:title
Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes
skos:prefLabel
Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes
skos:notation
RIV/67985882:_____/13:00395132!RIV14-MSM-67985882
n18:predkladatel
n19:ico%3A67985882
n3:aktivita
n17:P n17:I
n3:aktivity
I, P(LD12014)
n3:cisloPeriodika
5
n3:dodaniDat
n14:2014
n3:domaciTvurceVysledku
Yatskiv, Roman n6:2267659
n3:druhVysledku
n13:J
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
110933
n3:idVysledku
RIV/67985882:_____/13:00395132
n3:jazykVysledku
n8:eng
n3:klicovaSlova
Gallium nitride; Schottky barrier diodes; Graphite
n3:klicoveSlovo
n4:Schottky%20barrier%20diodes n4:Gallium%20nitride n4:Graphite
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[992B7709CFB0]
n3:nazevZdroje
Semiconductor Science and Technology
n3:obor
n16:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:projekt
n10:LD12014
n3:rokUplatneniVysledku
n14:2013
n3:svazekPeriodika
28
n3:tvurceVysledku
Yatskiv, Roman Grym, Jan
n3:wos
000317746100012
s:issn
0268-1242
s:numberOfPages
4
n5:doi
10.1088/0268-1242/28/5/055009