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Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n14http://linked.opendata.cz/resource/domain/vavai/projekt/
n12http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n15http://linked.opendata.cz/resource/domain/vavai/subjekt/
n11http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n17http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F67985882%3A_____%2F12%3A00387641%21RIV13-AV0-67985882/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n8http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n4http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n6http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n10http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F12%3A00387641%21RIV13-AV0-67985882
rdf:type
n11:Vysledek skos:Concept
dcterms:description
We report on the electrochemical preparation of porous GaAs substrates suited for the lattice mismatched epitaxial growth. We show that surfaces with different pore diameter, pore spacing and surface roughness can be achieved by careful selection of the etching regime, electrolyte, and substrate We report on the electrochemical preparation of porous GaAs substrates suited for the lattice mismatched epitaxial growth. We show that surfaces with different pore diameter, pore spacing and surface roughness can be achieved by careful selection of the etching regime, electrolyte, and substrate
dcterms:title
Preparation of nanoporous GaAs substrates for epitaxial growth Preparation of nanoporous GaAs substrates for epitaxial growth
skos:prefLabel
Preparation of nanoporous GaAs substrates for epitaxial growth Preparation of nanoporous GaAs substrates for epitaxial growth
skos:notation
RIV/67985882:_____/12:00387641!RIV13-AV0-67985882
n11:predkladatel
n15:ico%3A67985882
n3:aktivita
n4:P n4:I
n3:aktivity
I, P(GAP108/10/0253)
n3:cisloPeriodika
7
n3:dodaniDat
n10:2013
n3:domaciTvurceVysledku
n12:1902458 n12:2267659 n12:8011141
n3:druhVysledku
n18:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
161352
n3:idVysledku
RIV/67985882:_____/12:00387641
n3:jazykVysledku
n8:eng
n3:klicovaSlova
semiconductor technology; porous semiconductors; epitaxial growth
n3:klicoveSlovo
n7:porous%20semiconductors n7:epitaxial%20growth n7:semiconductor%20technology
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[7486090DDF21]
n3:nazevZdroje
Physica Status Solidi C: Current Topics in Solid State Physics
n3:obor
n6:JJ
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
4
n3:projekt
n14:GAP108%2F10%2F0253
n3:rokUplatneniVysledku
n10:2012
n3:svazekPeriodika
9
n3:tvurceVysledku
Nohavica, Dušan Vaniš, Jan Piksová, K. Grym, Jan
n3:wos
000306479300001
s:issn
1862-6351
s:numberOfPages
3