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Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F11%3A00437407%21RIV15-AV0-67985882
rdf:type
n4:Vysledek skos:Concept
dcterms:description
Hydrogen sensing characteristics of graphite-Pd(Pt)lInP Schottky diodes fabricated by electrophoretic deposition technique were investigated. The proposed hydrogen sensors showed relatively high sensitivity response of 10 6 to 1000 ppm H 2 in N 2. The barrier height reduction due to hydrogen exposure was 0.35 eV and 0.37 eV for Pd and Pt based Schottky diodes respectively. Temperature dependence of the sensitivity, the barrier height variation, the ideality factor and the barrier height itself were studied. Pt based Schottky diodes show better sensitivity and shorter recovery times compared to Pd ones Hydrogen sensing characteristics of graphite-Pd(Pt)lInP Schottky diodes fabricated by electrophoretic deposition technique were investigated. The proposed hydrogen sensors showed relatively high sensitivity response of 10 6 to 1000 ppm H 2 in N 2. The barrier height reduction due to hydrogen exposure was 0.35 eV and 0.37 eV for Pd and Pt based Schottky diodes respectively. Temperature dependence of the sensitivity, the barrier height variation, the ideality factor and the barrier height itself were studied. Pt based Schottky diodes show better sensitivity and shorter recovery times compared to Pd ones
dcterms:title
High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor
skos:prefLabel
High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor
skos:notation
RIV/67985882:_____/11:00437407!RIV15-AV0-67985882
n5:aktivita
n20:Z
n5:aktivity
Z(AV0Z20670512)
n5:dodaniDat
n16:2015
n5:domaciTvurceVysledku
Yatskiv, Roman n18:2267659 n18:5077443
n5:druhVysledku
n10:D
n5:duvernostUdaju
n17:S
n5:entitaPredkladatele
n15:predkladatel
n5:idSjednocenehoVysledku
202036
n5:idVysledku
RIV/67985882:_____/11:00437407
n5:jazykVysledku
n12:eng
n5:klicovaSlova
High sensitivity; Electrophoretic deposition techniques; Hydrogen sensor
n5:klicoveSlovo
n8:Hydrogen%20sensor n8:High%20sensitivity n8:Electrophoretic%20deposition%20techniques
n5:kontrolniKodProRIV
[2029A7BD1B5E]
n5:mistoKonaniAkce
Berlin
n5:mistoVydani
Berlin
n5:nazevZdroje
2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials (CSW/IPRM 2011)
n5:obor
n9:JA
n5:pocetDomacichTvurcuVysledku
3
n5:pocetTvurcuVysledku
4
n5:rokUplatneniVysledku
n16:2011
n5:tvurceVysledku
Grym, Jan Piksová, K. Žďánský, Karel Yatskiv, Roman
n5:typAkce
n19:WRD
n5:zahajeniAkce
2011-05-22+02:00
n5:zamer
n7:AV0Z20670512
s:issn
1092-8669
s:numberOfPages
4
n3:hasPublisher
IEEE
n14:isbn
978-1-4577-1753-6