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Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F09%3A00346171%21RIV11-AV0-67985882
rdf:type
skos:Concept n13:Vysledek
dcterms:description
We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 10(14) cm(-3). Three types of p-n junction based radiation detection structures were prepared and their detection performance was assessed by using alpha-particles emitted from the Am-241 radioactive source. The type Ill structure, utilizing the p-n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency. We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 10(14) cm(-3). Three types of p-n junction based radiation detection structures were prepared and their detection performance was assessed by using alpha-particles emitted from the Am-241 radioactive source. The type Ill structure, utilizing the p-n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency.
dcterms:title
Impact of Pr on the properties of InP based layers for light sources and detectors Impact of Pr on the properties of InP based layers for light sources and detectors
skos:prefLabel
Impact of Pr on the properties of InP based layers for light sources and detectors Impact of Pr on the properties of InP based layers for light sources and detectors
skos:notation
RIV/67985882:_____/09:00346171!RIV11-AV0-67985882
n3:aktivita
n7:Z
n3:aktivity
Z(AV0Z20670512)
n3:dodaniDat
n9:2011
n3:domaciTvurceVysledku
n12:2267659 n12:2040980 n12:5077443 Yatskiv, Roman n12:2853620
n3:druhVysledku
n18:D
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
318619
n3:idVysledku
RIV/67985882:_____/09:00346171
n3:jazykVysledku
n15:eng
n3:klicovaSlova
detection; radiation
n3:klicoveSlovo
n6:radiation n6:detection
n3:kontrolniKodProRIV
[2353095039D5]
n3:mistoKonaniAkce
Vilnius
n3:mistoVydani
WEINHEIM
n3:nazevZdroje
PHYSICA STATUS SOLIDI
n3:obor
n8:JA
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:rokUplatneniVysledku
n9:2009
n3:tvurceVysledku
Yatskiv, Roman Grym, Jan Zavadil, Jiří Žďánský, Karel Procházková, Olga
n3:typAkce
n19:WRD
n3:wos
000279548000048
n3:zahajeniAkce
2009-06-15+02:00
n3:zamer
n16:AV0Z20670512
s:issn
1610-1634
s:numberOfPages
4
n11:hasPublisher
WILEY