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Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F08%3A00346031%21RIV11-AV0-67985882
rdf:type
skos:Concept n20:Vysledek
dcterms:description
Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE’s high affinity towards shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources. Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE’s high affinity towards shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources.
dcterms:title
Role of rare-earth elements in the design of radiation detectors and electroluminescent sources Role of rare-earth elements in the design of radiation detectors and electroluminescent sources
skos:prefLabel
Role of rare-earth elements in the design of radiation detectors and electroluminescent sources Role of rare-earth elements in the design of radiation detectors and electroluminescent sources
skos:notation
RIV/67985882:_____/08:00346031!RIV11-AV0-67985882
n3:aktivita
n10:Z
n3:aktivity
Z(AV0Z20670512)
n3:dodaniDat
n12:2011
n3:domaciTvurceVysledku
n8:2853620 n8:2040980 n8:2267659 n8:5077443
n3:druhVysledku
n13:D
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
393215
n3:idVysledku
RIV/67985882:_____/08:00346031
n3:jazykVysledku
n18:eng
n3:klicovaSlova
semiconductor technology; rare earth elements; III-V semiconductors
n3:klicoveSlovo
n4:rare%20earth%20elements n4:semiconductor%20technology n4:III-V%20semiconductors
n3:kontrolniKodProRIV
[AD5AA595CC4A]
n3:mistoKonaniAkce
Smolenice
n3:mistoVydani
Piscataway, N.J
n3:nazevZdroje
ASDAM 2008
n3:obor
n6:JJ
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:rokUplatneniVysledku
n12:2008
n3:tvurceVysledku
Žďánský, Karel Grym, Jan Zavadil, Jiří Procházková, Olga
n3:typAkce
n5:WRD
n3:wos
000263223200022
n3:zahajeniAkce
2008-10-12+02:00
n3:zamer
n11:AV0Z20670512
s:numberOfPages
4
n16:hasPublisher
IEEE Operation Center
n19:isbn
978-1-4244-2325-5