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Namespace Prefixes

PrefixIRI
n16http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n4http://purl.org/net/nknouf/ns/bibtex#
n19http://linked.opendata.cz/resource/domain/vavai/projekt/
n6http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n14http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F67985882%3A_____%2F08%3A00308798%21RIV11-GA0-67985882/
n12http://linked.opendata.cz/ontology/domain/vavai/
n17https://schema.org/
n5http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n8http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n20http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n15http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n21http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n13http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n11http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F08%3A00308798%21RIV11-GA0-67985882
rdf:type
n12:Vysledek skos:Concept
dcterms:description
The investigation of gettering and/or doping efficiency of Yb and Yb2O3 added into the growth process of InP epitaxial layers. Layers were examined by SIMS, low temperature PL spectroscopy, C-V and temperature dependent Hall measurements. The gettering was confirmed for both Yb and Yb2O3; doping effect, i.e. incorporation of Yb3+ into InP lattice was confirmed only for Yb addition. Dominant acceptor responsible for n-p conductivity conversion was identified as isoelectronic Yb impurity on the In site. The investigation of gettering and/or doping efficiency of Yb and Yb2O3 added into the growth process of InP epitaxial layers. Layers were examined by SIMS, low temperature PL spectroscopy, C-V and temperature dependent Hall measurements. The gettering was confirmed for both Yb and Yb2O3; doping effect, i.e. incorporation of Yb3+ into InP lattice was confirmed only for Yb addition. Dominant acceptor responsible for n-p conductivity conversion was identified as isoelectronic Yb impurity on the In site.
dcterms:title
Influence of Yb and Yb2O3 on the properties of InP layers Influence of Yb and Yb2O3 on the properties of InP layers
skos:prefLabel
Influence of Yb and Yb2O3 on the properties of InP layers Influence of Yb and Yb2O3 on the properties of InP layers
skos:notation
RIV/67985882:_____/08:00308798!RIV11-GA0-67985882
n3:aktivita
n7:P n7:Z
n3:aktivity
P(GA102/06/0153), P(GP102/08/P617), Z(AV0Z20670512)
n3:dodaniDat
n11:2011
n3:domaciTvurceVysledku
n6:5077443 n6:2040980 n6:2853620 n6:2267659 n6:3523217
n3:druhVysledku
n13:D
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
372362
n3:idVysledku
RIV/67985882:_____/08:00308798
n3:jazykVysledku
n15:eng
n3:klicovaSlova
semiconductor technology; indium compounds; rare earth compounds
n3:klicoveSlovo
n8:semiconductor%20technology n8:indium%20compounds n8:rare%20earth%20compounds
n3:kontrolniKodProRIV
[2162E9477DF5]
n3:mistoKonaniAkce
Versailles
n3:mistoVydani
Piscataway
n3:nazevZdroje
IPRM 2008 - Proceedings of the 20th Indium Phosphide and Related Materials Conference
n3:obor
n21:JA
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:projekt
n19:GA102%2F06%2F0153 n19:GP102%2F08%2FP617
n3:rokUplatneniVysledku
n11:2008
n3:tvurceVysledku
Procházková, Olga Žďánský, Karel Zavadil, Jiří Grym, Jan Lorinčík, Jan
n3:typAkce
n16:WRD
n3:wos
000267695700100
n3:zahajeniAkce
2008-05-25+02:00
n3:zamer
n5:AV0Z20670512
s:numberOfPages
4
n4:hasPublisher
Institute of Electrical and Electronic Engineers
n17:isbn
978-1-4244-2258-6