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Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F06%3A00083592%21RIV08-AV0-67985882
rdf:type
n8:Vysledek skos:Concept
dcterms:description
The main purpose of this work was the comparison of the silicon nitride prepared by the LP CVD and by the MW PE CVD from silane and ammonia gases with respect to the possibility of passivation c-Si surface layer. The properties of the silicon nitride films were studied by the surface photovoltage (SPV), FTIR and SIMS methods. The average value of the diffusion length of minority carriers in the Si samples with the LP CVD nitride was shorter and dependent on the location in the reactor. Hlavním cílem práce bylo porovnání nitridu křemíku připraveného metodami LP CVD a MW PE CVD ze silanu a čpavku s ohledem na možnost pasivace c-Si povrchových vrstev. Vlastnosti vrstev nitridu křemíku byly studovány metodami SPV, FTIR a SIMS. Průměrná hodnota difuzní délky minoritních nosičů v Si vzorcích s LP CVD nitridem byla kratší a závisela na místě v reaktoru. The main purpose of this work was the comparison of the silicon nitride prepared by the LP CVD and by the MW PE CVD from silane and ammonia gases with respect to the possibility of passivation c-Si surface layer. The properties of the silicon nitride films were studied by the surface photovoltage (SPV), FTIR and SIMS methods. The average value of the diffusion length of minority carriers in the Si samples with the LP CVD nitride was shorter and dependent on the location in the reactor.
dcterms:title
Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers Vliv vrstev nitridu křemíku na difuzní délku minoritních nosičů v Si Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers
skos:prefLabel
Vliv vrstev nitridu křemíku na difuzní délku minoritních nosičů v Si Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers
skos:notation
RIV/67985882:_____/06:00083592!RIV08-AV0-67985882
n3:strany
960;962
n3:aktivita
n20:Z
n3:aktivity
Z(AV0Z20670512)
n3:dodaniDat
n16:2008
n3:domaciTvurceVysledku
n13:3523217
n3:druhVysledku
n14:D
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
479502
n3:idVysledku
RIV/67985882:_____/06:00083592
n3:jazykVysledku
n10:eng
n3:klicovaSlova
solar cells; hydrogen; plasma
n3:klicoveSlovo
n9:hydrogen n9:plasma n9:solar%20cells
n3:kontrolniKodProRIV
[78CFDA6AD2E6]
n3:mistoKonaniAkce
Dresden
n3:mistoVydani
München
n3:nazevZdroje
Proceedings of the International Conference Twentyfirst European Photovoltaic Solar Energy
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
6
n3:rokUplatneniVysledku
n16:2006
n3:tvurceVysledku
Lorinčík, Jan Bařinka, R. Poruba, A. Toušek, J. Hlídek, P. Toušková, J.
n3:typAkce
n7:EUR
n3:zahajeniAkce
2006-09-04+02:00
n3:zamer
n19:AV0Z20670512
s:numberOfPages
3
n17:hasPublisher
WIP-Renewable Energies
n12:isbn
3-936338-20-5