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Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F05%3A00021055%21RIV06-AV0-67985882
rdf:type
skos:Concept n7:Vysledek
dcterms:description
We reported method of preparation of PbI2 crystals by direct synthesis. The rear earth elements (Ce, Ho, Gd, Yb, Er and Tb in concentrations 0.05 – 0.5 at. %.) were introduced as admixtures during synthesis in order to study their influence on the quality of crystals. The effect of zone melting was evaluated. The characterization of crystals was done by measurements of electrical resistivity and low temperature photo-luminescence. The resistivity varied from 109 to 1011 .OMEGA.cm and was increased up to 1013 .OMEGA.cm. We reported method of preparation of PbI2 crystals by direct synthesis. The rear earth elements (Ce, Ho, Gd, Yb, Er and Tb in concentrations 0.05 – 0.5 at. %.) were introduced as admixtures during synthesis in order to study their influence on the quality of crystals. The effect of zone melting was evaluated. The characterization of crystals was done by measurements of electrical resistivity and low temperature photo-luminescence. The resistivity varied from 109 to 1011 .OMEGA.cm and was increased up to 1013 .OMEGA.cm. Prezentujeme metodu přípravy krystalů PbI2 přímou syntézou. Během syntézy byly zaváděny prvky vzácných zemin (Ce, Ho, Gd, Yb, Er and Tb v koncentracích 0.05 – 0.5 at. %.) za účelem zjištění jejich vlivu na kvalitu krystalů. Byl vyhodnocen vliv zonálního tavení. Charakterizace krystalů byla prováděna měřením resistivity a nizkoteplotní fotolumimiscencí. Resistivita byla v rozmezí 109 do 1011 .OMEGA.cm a po čištění se zvýšila na 1013 .OMEGA.cm.
dcterms:title
Study of the properties of lead idodide for X-ray detection Studium vlastností jodidu olovnatého pro rtg detekci Study of the properties of lead idodide for X-ray detection
skos:prefLabel
Study of the properties of lead idodide for X-ray detection Study of the properties of lead idodide for X-ray detection Studium vlastností jodidu olovnatého pro rtg detekci
skos:notation
RIV/67985882:_____/05:00021055!RIV06-AV0-67985882
n4:strany
182
n4:aktivita
n12:P n12:Z
n4:aktivity
P(GA102/03/0379), P(GA102/04/0959), Z(AV0Z20670512)
n4:cisloPeriodika
1
n4:dodaniDat
n8:2006
n4:domaciTvurceVysledku
n11:2040980 n11:5077443 n11:1070649
n4:druhVysledku
n13:J
n4:duvernostUdaju
n16:S
n4:entitaPredkladatele
n17:predkladatel
n4:idSjednocenehoVysledku
545289
n4:idVysledku
RIV/67985882:_____/05:00021055
n4:jazykVysledku
n18:eng
n4:klicovaSlova
zone melting; X-Ray diffraction; semiconductor technology
n4:klicoveSlovo
n5:zone%20melting n5:semiconductor%20technology n5:X-Ray%20diffraction
n4:kodStatuVydavatele
SK - Slovenská republika
n4:kontrolniKodProRIV
[6650860EB26D]
n4:nazevZdroje
ChemZi
n4:obor
n15:JA
n4:pocetDomacichTvurcuVysledku
3
n4:pocetTvurcuVysledku
3
n4:projekt
n10:GA102%2F04%2F0959 n10:GA102%2F03%2F0379
n4:rokUplatneniVysledku
n8:2005
n4:svazekPeriodika
1
n4:tvurceVysledku
Matuchová, Marie Žďánský, Karel Zavadil, Jiří
n4:zamer
n14:AV0Z20670512
s:issn
1336-7242
s:numberOfPages
1