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Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F04%3A00105959%21RIV%2F2005%2FAV0%2FA13005%2FN
rdf:type
n11:Vysledek skos:Concept
dcterms:description
Double doping with Ti and Mn, has been considered to be convenient for detector development because of two reasons. The first is bound to deep donor level of Ti with much smaller holes cross section than Fe, the second consists in Mn purifying properties. Semi-insulating behavior of such crystals and their evaluation for use in particle detectors and detection of radiation were studied by authors for a long time. Some results were recently published by K. Zdansky et al. Double doping with Ti and Mn, has been considered to be convenient for detector development because of two reasons. The first is bound to deep donor level of Ti with much smaller holes cross section than Fe, the second consists in Mn purifying properties. Semi-insulating behavior of such crystals and their evaluation for use in particle detectors and detection of radiation were studied by authors for a long time. Some results were recently published by K. Zdansky et al. Dopování Ti a Mn se považuje za vhodné pro vývoj detektorů z nasledujících důvodů. Prvním se jeví mnohem menší záchytný průřez děr atomy Ti něž atomy Fe, druhým jsou getrovací vlastnosti Mn. Semiizolační vlastnosti takových krystalů a jejich hodnocení pro detektory částic a detektory záření se zkoumaly dlouhou dobu. Některé výsledky byly publikované K. Žďánským aj.
dcterms:title
Výzkum semiizolačního InP dopovaného Ti pro detektory alfa částic a gama záření Investigation of semi-insulating InP doped with Ti for Alpha particles and Gamma ray detectors Investigation of semi-insulating InP doped with Ti for Alpha particles and Gamma ray detectors
skos:prefLabel
Výzkum semiizolačního InP dopovaného Ti pro detektory alfa částic a gama záření Investigation of semi-insulating InP doped with Ti for Alpha particles and Gamma ray detectors Investigation of semi-insulating InP doped with Ti for Alpha particles and Gamma ray detectors
skos:notation
RIV/67985882:_____/04:00105959!RIV/2005/AV0/A13005/N
n3:strany
145;146
n3:aktivita
n10:P
n3:aktivity
P(IBS2067354), P(KSK1010104)
n3:dodaniDat
n4:2005
n3:domaciTvurceVysledku
n13:5077443 n13:7563442
n3:druhVysledku
n20:D
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
568917
n3:idVysledku
RIV/67985882:_____/04:00105959
n3:jazykVysledku
n17:eng
n3:klicovaSlova
particle detectors;radiation detection;III-V semiconductors
n3:klicoveSlovo
n6:III-V%20semiconductors n6:radiation%20detection n6:particle%20detectors
n3:kontrolniKodProRIV
[92CD83ADF5B5]
n3:mistoKonaniAkce
Chernivtsi
n3:mistoVydani
Chernivtsi
n3:nazevZdroje
II Ukrainian Scientific Conference on Semiconductor Physics - USCSP-2
n3:obor
n8:JB
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
4
n3:projekt
n14:IBS2067354 n14:KSK1010104
n3:rokUplatneniVysledku
n4:2004
n3:tvurceVysledku
Žďánský, Karel Vacková, S. Pekárek, Ladislav Gorodynskyy, Vladyslav
n3:typAkce
n16:EUR
n3:zahajeniAkce
2004-09-20+02:00
s:numberOfPages
2
n19:hasPublisher
Ruta
n9:isbn
966-568-709-3