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Statements

Subject Item
n2:RIV%2F61989592%3A15310%2F13%3A33145700%21RIV14-GA0-15310___
rdf:type
n9:Vysledek skos:Concept
dcterms:description
Electrolysis of ultrapure water in a two-electrode cell with silver anode and conductive substrate (Si wafer) as a cathode leads to the formation of nanostructured silver layers deposited on cathode. In the process, the silver anode is electrochemically dissolved to silver cations, which react with water (or OH center dot radicals derived from water electrolysis) forming silver oxide nanoparticles, which fill the interelectrode space by electrophoretic movement, diffusion and convection induced by temperature effects of electrolysis. During the process the silver oxide nanoparticles are partially transformed into silver nanoparticles. On the cathode, silver cations and silver! silver oxide nanoparticles undergo reduction to form nanostructured silver film. The results of the present study open a new, extremely simple and ultra-low cost way to prepare nanostructured silver films on conducting and semiconducting substrates. The prepared nanosilver coated silicon substrates exhibit high performances as amperometric sensors for hydrogen peroxide and also as SERS substrates. Electrolysis of ultrapure water in a two-electrode cell with silver anode and conductive substrate (Si wafer) as a cathode leads to the formation of nanostructured silver layers deposited on cathode. In the process, the silver anode is electrochemically dissolved to silver cations, which react with water (or OH center dot radicals derived from water electrolysis) forming silver oxide nanoparticles, which fill the interelectrode space by electrophoretic movement, diffusion and convection induced by temperature effects of electrolysis. During the process the silver oxide nanoparticles are partially transformed into silver nanoparticles. On the cathode, silver cations and silver! silver oxide nanoparticles undergo reduction to form nanostructured silver film. The results of the present study open a new, extremely simple and ultra-low cost way to prepare nanostructured silver films on conducting and semiconducting substrates. The prepared nanosilver coated silicon substrates exhibit high performances as amperometric sensors for hydrogen peroxide and also as SERS substrates.
dcterms:title
Deposition of Nanostructured Ag Films on Silicon Wafers by Electrochemical/Electrophoretic Deposition for Electrochemical and SERS Sensing Deposition of Nanostructured Ag Films on Silicon Wafers by Electrochemical/Electrophoretic Deposition for Electrochemical and SERS Sensing
skos:prefLabel
Deposition of Nanostructured Ag Films on Silicon Wafers by Electrochemical/Electrophoretic Deposition for Electrochemical and SERS Sensing Deposition of Nanostructured Ag Films on Silicon Wafers by Electrochemical/Electrophoretic Deposition for Electrochemical and SERS Sensing
skos:notation
RIV/61989592:15310/13:33145700!RIV14-GA0-15310___
n9:predkladatel
n10:orjk%3A15310
n3:aktivita
n12:S n12:P
n3:aktivity
P(GAP206/12/0796), S
n3:cisloPeriodika
4
n3:dodaniDat
n6:2014
n3:domaciTvurceVysledku
n8:2942356 n8:5892961 n8:8419647 n8:1096176
n3:druhVysledku
n5:J
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
68415
n3:idVysledku
RIV/61989592:15310/13:33145700
n3:jazykVysledku
n16:eng
n3:klicovaSlova
Sensing; SERS; Electrochemical; Deposition; Electrochemical/Electrophoretic; Wafers; Silicon; Films; Nanostructured
n3:klicoveSlovo
n4:Sensing n4:Electrochemical%2FElectrophoretic n4:Deposition n4:Silicon n4:Films n4:Wafers n4:Nanostructured n4:SERS n4:Electrochemical
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[3F95DD93DEF9]
n3:nazevZdroje
Journal of the Electrochemical Society
n3:obor
n17:CG
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
8
n3:projekt
n19:GAP206%2F12%2F0796
n3:rokUplatneniVysledku
n6:2013
n3:svazekPeriodika
160
n3:tvurceVysledku
Jakubec, Petr Falaras, Polycarpos Likodimos, Vlassis Kontos, Athanassios G Hrbáč, Jan Halouzka, Vladimír Papadopoulos, Kyriakos Kvítek, Libor
n3:wos
000316976800038
s:issn
0013-4651
s:numberOfPages
6
n18:doi
10.1149/2.003306jes
n15:organizacniJednotka
15310