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Statements

Subject Item
n2:RIV%2F61989100%3A27350%2F10%3A86075994%21RIV11-MSM-27350___
rdf:type
n8:Vysledek skos:Concept
dcterms:description
Integration of functional oxides on silicon is a key issue for the development of oxide-based electronics. For this purpose, monitoring the growth of these materials by an in situ technique becomes essential to control the thickness, the roughness and the oxidation state of the layers. Using a new static optical setup, i.e. with no modulation, we have studied the deposition and the annealing of pulsed-laser deposited La0.67Sr0.33MnO3 monolayers on pseudosubstrates SrTiO3(100)/Si at high temperature. We show that using the ratio of reflectance for the two different polarizations (s,p) R-p/R-s = tan(2)psi of the optical signal after reflection, we can follow, in situ, the growth of monolayers (ML) with a precision of one unit cell. Also, the growth mode and the annealing process leading to the determination of the activation energy can be precisely controlled. All these results are corroborated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Integration of functional oxides on silicon is a key issue for the development of oxide-based electronics. For this purpose, monitoring the growth of these materials by an in situ technique becomes essential to control the thickness, the roughness and the oxidation state of the layers. Using a new static optical setup, i.e. with no modulation, we have studied the deposition and the annealing of pulsed-laser deposited La0.67Sr0.33MnO3 monolayers on pseudosubstrates SrTiO3(100)/Si at high temperature. We show that using the ratio of reflectance for the two different polarizations (s,p) R-p/R-s = tan(2)psi of the optical signal after reflection, we can follow, in situ, the growth of monolayers (ML) with a precision of one unit cell. Also, the growth mode and the annealing process leading to the determination of the activation energy can be precisely controlled. All these results are corroborated by X-ray diffraction (XRD) and atomic force microscopy (AFM).
dcterms:title
In situ monitoring of La0.67Sr0.33MnO3 monolayers grown by pulsed laser deposition In situ monitoring of La0.67Sr0.33MnO3 monolayers grown by pulsed laser deposition
skos:prefLabel
In situ monitoring of La0.67Sr0.33MnO3 monolayers grown by pulsed laser deposition In situ monitoring of La0.67Sr0.33MnO3 monolayers grown by pulsed laser deposition
skos:notation
RIV/61989100:27350/10:86075994!RIV11-MSM-27350___
n3:aktivita
n4:N
n3:aktivity
N
n3:cisloPeriodika
8
n3:dodaniDat
n9:2011
n3:domaciTvurceVysledku
n12:1468391
n3:druhVysledku
n15:J
n3:duvernostUdaju
n6:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
263280
n3:idVysledku
RIV/61989100:27350/10:86075994
n3:jazykVysledku
n14:eng
n3:klicovaSlova
optical properties; magnetic oxides; magnetotransport; laser ablation deposition
n3:klicoveSlovo
n7:optical%20properties n7:magnetic%20oxides n7:laser%20ablation%20deposition n7:magnetotransport
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[AC840410AB98]
n3:nazevZdroje
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
n3:obor
n17:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
6
n3:rokUplatneniVysledku
n9:2010
n3:svazekPeriodika
247
n3:tvurceVysledku
Gogol, Philippe Esteve, David Postava, Kamil
n3:wos
000281092600019
s:issn
0370-1972
s:numberOfPages
4
n13:organizacniJednotka
27350