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Statements

Subject Item
n2:RIV%2F61989100%3A27350%2F08%3A00019796%21RIV09-MSM-27350___
rdf:type
skos:Concept n16:Vysledek
dcterms:description
Anodized layers on InAsSb, InSb, and InAs surfaces are characterized using phase modulation spectroscopic ellipsometry in a wide spectral range from 0.6 to 6.5 eV. Single crystal InAs0.04Sb0.94 layer was grown using melt-epitaxy (ME). Optical properties of anodized layer prepared on InAsSb single crystal are compared with those on pure single crystals of InAs and InSb. Ellipsometric spectra of were fitted to the Tauc-Lorentz model describing the anodizing layer optical functions. Clear tendency of ultraviolet shift of the band gap energy with decreasing antimony content is observed. Spektroskopická elipsometrie anodizační vrstvy na vrstvě monokrystalu InAsSb připravené epitaxí z taveniny Anodized layers on InAsSb, InSb, and InAs surfaces are characterized using phase modulation spectroscopic ellipsometry in a wide spectral range from 0.6 to 6.5 eV. Single crystal InAs0.04Sb0.94 layer was grown using melt-epitaxy (ME). Optical properties of anodized layer prepared on InAsSb single crystal are compared with those on pure single crystals of InAs and InSb. Ellipsometric spectra of were fitted to the Tauc-Lorentz model describing the anodizing layer optical functions. Clear tendency of ultraviolet shift of the band gap energy with decreasing antimony content is observed.
dcterms:title
Spektroskopická elipsometrie anodizační vrstvy na vrstvě monokrystalu InAsSb připravené epitaxí z taveniny Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy
skos:prefLabel
Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy Spektroskopická elipsometrie anodizační vrstvy na vrstvě monokrystalu InAsSb připravené epitaxí z taveniny Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy
skos:notation
RIV/61989100:27350/08:00019796!RIV09-MSM-27350___
n3:aktivita
n12:P n12:Z
n3:aktivity
P(KAN400100653), Z(MSM6198910016)
n3:cisloPeriodika
5
n3:dodaniDat
n13:2009
n3:domaciTvurceVysledku
n11:5882087 n11:1468391
n3:druhVysledku
n4:J
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
396463
n3:idVysledku
RIV/61989100:27350/08:00019796
n3:jazykVysledku
n15:eng
n3:klicovaSlova
Spectroscopic ellipsometry; anodized layer; single crystal InAsSb; melt epitaxy
n3:klicoveSlovo
n5:Spectroscopic%20ellipsometry n5:single%20crystal%20InAsSb n5:anodized%20layer n5:melt%20epitaxy
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[DBA705A1E13B]
n3:nazevZdroje
physica status solidi (c) - current topics in solid state physics
n3:obor
n8:BH
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
7
n3:projekt
n18:KAN400100653
n3:rokUplatneniVysledku
n13:2008
n3:svazekPeriodika
5
n3:tvurceVysledku
Gong, X. Y. Halagačka, L. Nakaoka, A. Pištora, Jaromír Yamaguchi, T. Gao, Y. Z. Postava, Kamil
n3:zamer
n10:MSM6198910016
s:issn
1610-1634
s:numberOfPages
4
n17:organizacniJednotka
27350