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Statements

Subject Item
n2:RIV%2F61989100%3A27350%2F07%3A00016596%21RIV08-GA0-27350___
rdf:type
skos:Concept n12:Vysledek
dcterms:description
Metody spektrální interferometrie v bílem světle využívané k měření tloušťky tenkých vrstev We present a white-light spectral interferometric technique for measuring the thickness of a thin film on a substrate. First, the channeled spectrum is expressed analytically for a setup of a slightly dispersive Michelson interferometer with a cube beam splitter of given effective thickness and a fiber-optic spectrometer of a Gaussian response function when one of the interferometer mirrors is replaced by the thin film on the substrate. Then we model the wavelength dependences of the reflectance, the visibility of the spectral interference fringes, the phase change on reflection and the so-called nonlinear phase function, respectively, for a SiO2 thin film on a silicon wafer. In the modeling, the optical constants are known and multiple reflection within the thin-film structure is taken into account. Second, we perform interferometric experiments with a SiO thin film on aluminium and the SiO2 thin film on the silicon wafer. Channeled spectra are recorded for determining the thin-film thickness, provid We present a white-light spectral interferometric technique for measuring the thickness of a thin film on a substrate. First, the channeled spectrum is expressed analytically for a setup of a slightly dispersive Michelson interferometer with a cube beam splitter of given effective thickness and a fiber-optic spectrometer of a Gaussian response function when one of the interferometer mirrors is replaced by the thin film on the substrate. Then we model the wavelength dependences of the reflectance, the visibility of the spectral interference fringes, the phase change on reflection and the so-called nonlinear phase function, respectively, for a SiO2 thin film on a silicon wafer. In the modeling, the optical constants are known and multiple reflection within the thin-film structure is taken into account. Second, we perform interferometric experiments with a SiO thin film on aluminium and the SiO2 thin film on the silicon wafer. Channeled spectra are recorded for determining the thin-film thickness, provid
dcterms:title
Metody spektrální interferometrie v bílem světle využívané k měření tloušťky tenkých vrstev White-light spectral interferometric technique used to measure thickness of thin films White-light spectral interferometric technique used to measure thickness of thin films
skos:prefLabel
White-light spectral interferometric technique used to measure thickness of thin films Metody spektrální interferometrie v bílem světle využívané k měření tloušťky tenkých vrstev White-light spectral interferometric technique used to measure thickness of thin films
skos:notation
RIV/61989100:27350/07:00016596!RIV08-GA0-27350___
n3:strany
661605-661605
n3:aktivita
n13:P n13:Z
n3:aktivity
P(GA202/06/0531), Z(MSM6198910016)
n3:dodaniDat
n14:2008
n3:domaciTvurceVysledku
n5:1171283 n5:4194128 n5:9907734 n5:7662114
n3:druhVysledku
n8:D
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
461265
n3:idVysledku
RIV/61989100:27350/07:00016596
n3:jazykVysledku
n6:eng
n3:klicovaSlova
spectral interferometry; thin film thickness
n3:klicoveSlovo
n16:thin%20film%20thickness n16:spectral%20interferometry
n3:kontrolniKodProRIV
[6FB937C13AC1]
n3:mistoVydani
Bellingham
n3:nazevZdroje
Proceedings of SPIE
n3:obor
n20:BH
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
5
n3:projekt
n15:GA202%2F06%2F0531
n3:rokUplatneniVysledku
n14:2007
n3:tvurceVysledku
Lesňák, Michal Ciprian, Dalibor Hlubina, Petr Chlebus, R. Luňáček, Jiří
n3:zamer
n19:MSM6198910016
s:issn
0277-786X
s:numberOfPages
9
n11:hasPublisher
SPIE-The International Society for Optical Engineering
n9:organizacniJednotka
27350