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Statements

Subject Item
n2:RIV%2F61989100%3A27350%2F04%3A00011059%21RIV%2F2005%2FGA0%2F273505%2FN
rdf:type
n3:Vysledek skos:Concept
dcterms:description
Spektrální elipsometrie sestavy uhlíkových nanotrubic v SiC povrchovém rozkladu We have studied the initial stage of formation of carbon nanotube layers in surface decomposition of SiC substrate by meansof spectroscopic ellipsometry. Before heating, the surface of the SiC substrate was covered with an SiO layer that had been formed by natural oxidation. By heating up to 1100 C, reduction of SiO layer occurs. Between 1150 and 1300 C, the surface of SiC decomposes and a (graphiteqvoid) layer is formed on the surface. Then, by heating at 1300 C for longer time, a carbon nanotube layer is formed. As a result, we have detected the beginning of the surface decomposition at 1150 C and the beginning of the formation of a carbon nanotube layer at 1300 C. We have studied the initial stage of formation of carbon nanotube layers in surface decomposition of SiC substrate by meansof spectroscopic ellipsometry. Before heating, the surface of the SiC substrate was covered with an SiO layer that had been formed by natural oxidation. By heating up to 1100 C, reduction of SiO layer occurs. Between 1150 and 1300 C, the surface of SiC decomposes and a (graphiteqvoid) layer is formed on the surface. Then, by heating at 1300 C for longer time, a carbon nanotube layer is formed. As a result, we have detected the beginning of the surface decomposition at 1150 C and the beginning of the formation of a carbon nanotube layer at 1300 C.
dcterms:title
Spektrální elipsometrie sestavy uhlíkových nanotrubic v SiC povrchovém rozkladu Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition
skos:prefLabel
Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition Spektrální elipsometrie sestavy uhlíkových nanotrubic v SiC povrchovém rozkladu
skos:notation
RIV/61989100:27350/04:00011059!RIV/2005/GA0/273505/N
n4:strany
339-343
n4:aktivita
n14:P n14:Z
n4:aktivity
P(GA202/03/0776), Z(MSM 272400019)
n4:cisloPeriodika
455-456
n4:dodaniDat
n5:2005
n4:domaciTvurceVysledku
n13:1468391
n4:druhVysledku
n16:J
n4:duvernostUdaju
n17:S
n4:entitaPredkladatele
n12:predkladatel
n4:idSjednocenehoVysledku
587391
n4:idVysledku
RIV/61989100:27350/04:00011059
n4:jazykVysledku
n11:eng
n4:klicovaSlova
carbon nanotube;silicon carbide;surface decomposition;spectroellipsometry
n4:klicoveSlovo
n6:carbon%20nanotube n6:surface%20decomposition n6:silicon%20carbide n6:spectroellipsometry
n4:kodStatuVydavatele
NL - Nizozemsko
n4:kontrolniKodProRIV
[C3B25CE34B02]
n4:nazevZdroje
Thin Solid Films
n4:obor
n18:BH
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
6
n4:projekt
n15:GA202%2F03%2F0776
n4:rokUplatneniVysledku
n5:2004
n4:svazekPeriodika
Neuveden
n4:tvurceVysledku
Postava, Kamil Aoyama, M. Kawaguchi, Y. Takahashi, K. Maeda, H. Matsumoto, K.
n4:zamer
n19:MSM%20272400019
s:issn
0040-6090
s:numberOfPages
5
n8:organizacniJednotka
27350