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Statements

Subject Item
n2:RIV%2F61989100%3A27230%2F11%3A86078871%21RIV12-GA0-27230___
rdf:type
skos:Concept n11:Vysledek
dcterms:description
Technology of a composite material of silicon nano-particles (99.999 w% for semiconductors) arranged densely in a metal tin matrix (99.7 w%) is presented in the present paper. The main motivation for the technology development is an endeavor to prepare a nano-composite material in which semiconductor particles are crowded densely by applying high pressure in a metal matrix. In the above arrangement,a coexistence of very narrow mesh nanostructure of a tin matrix with dispersed nanoparicles of silicon is involved. With the high level of volume density of nanoparticles, the surface interface between metal and semiconductor attains an extraordinarily large size. Thanks to this fact,a significant enhancement of the volume rate of the transitional Shottky’s zone between metal tin and semiconductive silicon has been reached. Technology of a composite material of silicon nano-particles (99.999 w% for semiconductors) arranged densely in a metal tin matrix (99.7 w%) is presented in the present paper. The main motivation for the technology development is an endeavor to prepare a nano-composite material in which semiconductor particles are crowded densely by applying high pressure in a metal matrix. In the above arrangement,a coexistence of very narrow mesh nanostructure of a tin matrix with dispersed nanoparicles of silicon is involved. With the high level of volume density of nanoparticles, the surface interface between metal and semiconductor attains an extraordinarily large size. Thanks to this fact,a significant enhancement of the volume rate of the transitional Shottky’s zone between metal tin and semiconductive silicon has been reached.
dcterms:title
Preparation of Silicon Nanoparticular Nanocomposite with Thin Interparticular Tin Matrix Preparation of Silicon Nanoparticular Nanocomposite with Thin Interparticular Tin Matrix
skos:prefLabel
Preparation of Silicon Nanoparticular Nanocomposite with Thin Interparticular Tin Matrix Preparation of Silicon Nanoparticular Nanocomposite with Thin Interparticular Tin Matrix
skos:notation
RIV/61989100:27230/11:86078871!RIV12-GA0-27230___
n11:predkladatel
n12:orjk%3A27230
n3:aktivita
n9:P n9:Z
n3:aktivity
P(ED0040/01/01), P(GA106/08/1092), Z(MSM6198910016)
n3:cisloPeriodika
11
n3:dodaniDat
n13:2012
n3:domaciTvurceVysledku
n18:9378057
n3:druhVysledku
n7:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
223100
n3:idVysledku
RIV/61989100:27230/11:86078871
n3:jazykVysledku
n19:eng
n3:klicovaSlova
Silicon, Nanocomposite, Nanopar ticle, Resistivity, Semiconductor
n3:klicoveSlovo
n14:Semiconductor n14:Resistivity n14:Nanopar%20ticle n14:Silicon n14:Nanocomposite
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[93B95F19DC4B]
n3:nazevZdroje
Journal of nanoscience and nanotechnology
n3:obor
n17:JI
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
4
n3:projekt
n8:ED0040%2F01%2F01 n8:GA106%2F08%2F1092
n3:rokUplatneniVysledku
n13:2011
n3:svazekPeriodika
11
n3:tvurceVysledku
Dvorský, Richard Luňáček, Jiří Šancer, Jindřich Slíva, Aleš
n3:zamer
n15:MSM6198910016
s:issn
1533-4880
s:numberOfPages
7
n20:organizacniJednotka
27230