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Statements

Subject Item
n2:RIV%2F61389021%3A_____%2F14%3A00432105%21RIV15-GA0-61389021
rdf:type
skos:Concept n16:Vysledek
dcterms:description
Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering.It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration.Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C – principle used for industrial production of silicon),thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless,it does not produce SiC form applicable for laboratory purposes.Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid.Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production.However, SiO2 located between the planes of growth of SiC Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering.It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration.Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C – principle used for industrial production of silicon),thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless,it does not produce SiC form applicable for laboratory purposes.Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid.Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production.However, SiO2 located between the planes of growth of SiC
dcterms:title
Silicon carbide for chemical application prepared by SPS method Silicon carbide for chemical application prepared by SPS method
skos:prefLabel
Silicon carbide for chemical application prepared by SPS method Silicon carbide for chemical application prepared by SPS method
skos:notation
RIV/61389021:_____/14:00432105!RIV15-GA0-61389021
n5:aktivita
n15:P n15:I
n5:aktivity
I, P(GB14-36566G)
n5:dodaniDat
n11:2015
n5:domaciTvurceVysledku
n10:8624402 n10:1214527 n10:9960597 n10:2501368
n5:druhVysledku
n13:D
n5:duvernostUdaju
n18:S
n5:entitaPredkladatele
n8:predkladatel
n5:idSjednocenehoVysledku
44841
n5:idVysledku
RIV/61389021:_____/14:00432105
n5:jazykVysledku
n12:eng
n5:klicovaSlova
silicon carbide; spark plasma sintering; silicon carbide corrosion; impurities in silicon carbide
n5:klicoveSlovo
n6:silicon%20carbide n6:spark%20plasma%20sintering n6:silicon%20carbide%20corrosion n6:impurities%20in%20silicon%20carbide
n5:kontrolniKodProRIV
[469BCD939A16]
n5:mistoKonaniAkce
Mikulov
n5:mistoVydani
Prague
n5:nazevZdroje
Proceedings of the 2nd International Conference on Chemical Technology
n5:obor
n20:JG
n5:pocetDomacichTvurcuVysledku
4
n5:pocetTvurcuVysledku
5
n5:projekt
n19:GB14-36566G
n5:rokUplatneniVysledku
n11:2014
n5:tvurceVysledku
Mastný, L. Brožek, Vlastimil Kubatík, Tomáš František Vilémová, Monika Mušálek, Radek
n5:typAkce
n9:WRD
n5:zahajeniAkce
2014-04-07+02:00
s:numberOfPages
6
n3:hasPublisher
Czech Society of Industrial Chemistry
n17:isbn
978-80-86238-64-7