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Statements

Subject Item
n2:RIV%2F61389013%3A_____%2F13%3A00392068%21RIV14-AV0-61389013
rdf:type
n3:Vysledek skos:Concept
dcterms:description
Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1104 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly. Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1104 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly.
dcterms:title
Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots
skos:prefLabel
Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots
skos:notation
RIV/61389013:_____/13:00392068!RIV14-AV0-61389013
n3:predkladatel
n14:ico%3A61389013
n4:aktivita
n9:Z
n4:aktivity
Z(AV0Z40500505)
n4:cisloPeriodika
2
n4:dodaniDat
n13:2014
n4:domaciTvurceVysledku
Bielecka, Urszula n17:5801737
n4:druhVysledku
n19:J
n4:duvernostUdaju
n12:S
n4:entitaPredkladatele
n10:predkladatel
n4:idSjednocenehoVysledku
77951
n4:idVysledku
RIV/61389013:_____/13:00392068
n4:jazykVysledku
n18:eng
n4:klicovaSlova
organic transistor; poly(3-hexylthiophene); CdSe
n4:klicoveSlovo
n8:organic%20transistor n8:CdSe n8:poly%283-hexylthiophene%29
n4:kodStatuVydavatele
PL - Polská republika
n4:kontrolniKodProRIV
[6CE3A6025AD3]
n4:nazevZdroje
Materials Science-Poland
n4:obor
n15:CD
n4:pocetDomacichTvurcuVysledku
2
n4:pocetTvurcuVysledku
7
n4:rokUplatneniVysledku
n13:2013
n4:svazekPeriodika
31
n4:tvurceVysledku
Samoć, M. Lutsyk, P. Janus, K. Nyk, M. Nešpůrek, Stanislav Bartkowiak, W. Bielecka, Urszula
n4:wos
000317956100020
n4:zamer
n6:AV0Z40500505
s:issn
2083-1331
s:numberOfPages
10
n16:doi
10.2478/s13536-013-0101-0