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Statements

Subject Item
n2:RIV%2F61389005%3A_____%2F13%3A00399069%21RIV14-MSM-61389005
rdf:type
n4:Vysledek skos:Concept
dcterms:description
The fabrication of graphenes doped with electron withdrawing/donating elements can be realized through the synthesis procedures reported in this paper. Doping of the graphenes occurs during the thermal exfoliation step of graphite oxide in the presence of the dopant containing gas (BF3 or NH3). The materials are extensively characterized by high-resolution X-ray photoelectron spectroscopy, prompt gamma-ray activation analysis and Raman spectroscopy. Their electrical and electrochemical properties related to heterogeneous electron transfer rates and oxygen reductions are investigated. The doped materials display significant differences in their electronic properties where graphenes doped by electron donating dopants exhibit the largest conductivity as compared to those doped by electron accepting dopants. The scalable method reported here is able to successfully implant B and N into the graphene lattice and hence presented important future implications for the production of these materials on an industrial scale. The fabrication of graphenes doped with electron withdrawing/donating elements can be realized through the synthesis procedures reported in this paper. Doping of the graphenes occurs during the thermal exfoliation step of graphite oxide in the presence of the dopant containing gas (BF3 or NH3). The materials are extensively characterized by high-resolution X-ray photoelectron spectroscopy, prompt gamma-ray activation analysis and Raman spectroscopy. Their electrical and electrochemical properties related to heterogeneous electron transfer rates and oxygen reductions are investigated. The doped materials display significant differences in their electronic properties where graphenes doped by electron donating dopants exhibit the largest conductivity as compared to those doped by electron accepting dopants. The scalable method reported here is able to successfully implant B and N into the graphene lattice and hence presented important future implications for the production of these materials on an industrial scale.
dcterms:title
Boron and nitrogen doping of graphene via thermal exfoliation of graphite oxide in a BF3 or NH3 atmosphere: contrasting properties Boron and nitrogen doping of graphene via thermal exfoliation of graphite oxide in a BF3 or NH3 atmosphere: contrasting properties
skos:prefLabel
Boron and nitrogen doping of graphene via thermal exfoliation of graphite oxide in a BF3 or NH3 atmosphere: contrasting properties Boron and nitrogen doping of graphene via thermal exfoliation of graphite oxide in a BF3 or NH3 atmosphere: contrasting properties
skos:notation
RIV/61389005:_____/13:00399069!RIV14-MSM-61389005
n4:predkladatel
n5:ico%3A61389005
n6:aktivita
n16:I n16:P
n6:aktivity
I, P(LM2011019)
n6:cisloPeriodika
42
n6:dodaniDat
n9:2014
n6:domaciTvurceVysledku
n8:9846468
n6:druhVysledku
n19:J
n6:duvernostUdaju
n13:S
n6:entitaPredkladatele
n14:predkladatel
n6:idSjednocenehoVysledku
63758
n6:idVysledku
RIV/61389005:_____/13:00399069
n6:jazykVysledku
n18:eng
n6:klicovaSlova
Boron and nitrogen doping; Prompt gamma-ray activation analysis; Graphene lattices
n6:klicoveSlovo
n7:Prompt%20gamma-ray%20activation%20analysis n7:Graphene%20lattices n7:Boron%20and%20nitrogen%20doping
n6:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n6:kontrolniKodProRIV
[57ED7C622F17]
n6:nazevZdroje
Journal of materials chemistry A
n6:obor
n15:BG
n6:pocetDomacichTvurcuVysledku
1
n6:pocetTvurcuVysledku
5
n6:projekt
n10:LM2011019
n6:rokUplatneniVysledku
n9:2013
n6:svazekPeriodika
1
n6:tvurceVysledku
Poh, H. L. Pumera, M. Šimek, P. Tomandl, Ivo Sofer, Z.
n6:wos
000325577300016
s:issn
2050-7488
s:numberOfPages
8
n17:doi
10.1039/c3ta12460f