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Statements

Subject Item
n2:RIV%2F61389005%3A_____%2F13%3A00395263%21RIV14-MSM-61389005
rdf:type
skos:Concept n13:Vysledek
dcterms:description
GaN layers with < 0001 > crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 x 10(15)-1 x 10(16) cm(-2). The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 x 10(15) cm(-2) while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 x 10(15) cm(-2) to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement. GaN layers with < 0001 > crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 x 10(15)-1 x 10(16) cm(-2). The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 x 10(15) cm(-2) while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 x 10(15) cm(-2) to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement.
dcterms:title
A study of the structural properties of GaN implanted by various rare-earth ions A study of the structural properties of GaN implanted by various rare-earth ions
skos:prefLabel
A study of the structural properties of GaN implanted by various rare-earth ions A study of the structural properties of GaN implanted by various rare-earth ions
skos:notation
RIV/61389005:_____/13:00395263!RIV14-MSM-61389005
n13:predkladatel
n19:ico%3A61389005
n3:aktivita
n14:S n14:P n14:I
n3:aktivity
I, P(GA106/09/0125), P(LM2011019), S
n3:cisloPeriodika
7
n3:dodaniDat
n6:2014
n3:domaciTvurceVysledku
n18:5985498 n18:2200554
n3:druhVysledku
n12:J
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
59111
n3:idVysledku
RIV/61389005:_____/13:00395263
n3:jazykVysledku
n16:eng
n3:klicovaSlova
rare earth implantation; GaN; depth profiles; RBS; Raman spectroscopy; AFM
n3:klicoveSlovo
n5:rare%20earth%20implantation n5:AFM n5:Raman%20spectroscopy n5:RBS n5:depth%20profiles n5:GaN
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[33F299F20C21]
n3:nazevZdroje
Nuclear Instruments & Methods in Physics Research Section B
n3:obor
n4:BG
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
7
n3:projekt
n7:GA106%2F09%2F0125 n7:LM2011019
n3:rokUplatneniVysledku
n6:2013
n3:svazekPeriodika
307
n3:tvurceVysledku
Wilhelm, R. A. Mikulics, M. Macková, Anna Šimek, P. Sedmidubský, D. Malinský, Petr Sofer, Z.
n3:wos
000321722200099
s:issn
0168-583X
s:numberOfPages
6
n17:doi
10.1016/j.nimb.2012.11.079