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Statements

Subject Item
n2:RIV%2F61389005%3A_____%2F11%3A00365408%21RIV12-AV0-61389005
rdf:type
skos:Concept n18:Vysledek
dcterms:description
We present a complex study of rare earth elements implanted GaN layers grown by low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. Gd, Dy, La and Lu ions were implanted with energies of 200 key and doses ranging from 5 x 10(13) to 4 x 10(17) atoms.cm(-2). The chemical composition and concentration profiles of ion-implanted layers were studied by secondary ion mass spectrometry and Rutherford back scattering. The structural properties of the layers were characterized by Rutherford back scattering/channeling and X-ray diffraction reciprocal space mapping. We present a complex study of rare earth elements implanted GaN layers grown by low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. Gd, Dy, La and Lu ions were implanted with energies of 200 key and doses ranging from 5 x 10(13) to 4 x 10(17) atoms.cm(-2). The chemical composition and concentration profiles of ion-implanted layers were studied by secondary ion mass spectrometry and Rutherford back scattering. The structural properties of the layers were characterized by Rutherford back scattering/channeling and X-ray diffraction reciprocal space mapping.
dcterms:title
Magnetism in GaN layers implanted by La, Gd, Dy and Lu Magnetism in GaN layers implanted by La, Gd, Dy and Lu
skos:prefLabel
Magnetism in GaN layers implanted by La, Gd, Dy and Lu Magnetism in GaN layers implanted by La, Gd, Dy and Lu
skos:notation
RIV/61389005:_____/11:00365408!RIV12-AV0-61389005
n18:predkladatel
n19:ico%3A61389005
n3:aktivita
n10:Z n10:P
n3:aktivity
P(GA104/09/0621), P(GA104/09/1269), P(GA106/09/0125), Z(AV0Z10100521), Z(AV0Z10480505), Z(MSM6046137302)
n3:cisloPeriodika
18
n3:dodaniDat
n13:2012
n3:domaciTvurceVysledku
n16:9699414 n16:5985498
n3:druhVysledku
n20:J
n3:duvernostUdaju
n7:S
n3:entitaPredkladatele
n11:predkladatel
n3:idSjednocenehoVysledku
210252
n3:idVysledku
RIV/61389005:_____/11:00365408
n3:jazykVysledku
n14:eng
n3:klicovaSlova
Magnetic semiconductors; III-V semiconductors; Ion implantation; X-ray diffraction; Rutherford backscattering spectroscopy
n3:klicoveSlovo
n8:X-ray%20diffraction n8:Ion%20implantation n8:Magnetic%20semiconductors n8:Rutherford%20backscattering%20spectroscopy n8:III-V%20semiconductors
n3:kodStatuVydavatele
CH - Švýcarská konfederace
n3:kontrolniKodProRIV
[D5BEE233DD01]
n3:nazevZdroje
Thin Solid Films
n3:obor
n17:BG
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
12
n3:projekt
n9:GA104%2F09%2F0621 n9:GA106%2F09%2F0125 n9:GA104%2F09%2F1269
n3:rokUplatneniVysledku
n13:2011
n3:svazekPeriodika
519
n3:tvurceVysledku
Václavů, M. Buchal, C. Moram, M. Hejtmánek, Jiří Hardtdegen, H. Macková, Anna Maryško, Miroslav Sedmidubský, D. Sofer, Z. Groetzschel, R. Peřina, Vratislav Mikulics, M.
n3:wos
000292576500049
n3:zamer
n4:MSM6046137302 n4:AV0Z10100521 n4:AV0Z10480505
s:issn
0040-6090
s:numberOfPages
6
n12:doi
10.1016/j.tsf.2011.04.110