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Statements

Subject Item
n2:RIV%2F61389005%3A_____%2F08%3A00313793%21RIV09-AV0-61389005
rdf:type
skos:Concept n16:Vysledek
dcterms:description
The wurzite type gallium nitride doped by gadolinium, Ga1-xGdxN (x similar to 0.01-0.07), was prepared by Gd ion implantation of the parent GaN thin films deposited on sapphire substrates. The material obtained exhibits a weak ferromagnetism (FM) persisting up to 700 K. At higher Gd concentrations, the minute FM component coexists with much more pronounced Curie-type paramagnetism. In a dilute limit (x <= 0.01), the latter part is substantially reduced and the saturated FM moment reaches the value M similar to 2 mu(B)/Gd atom. The wurzite type gallium nitride doped by gadolinium, Ga1-xGdxN (x similar to 0.01-0.07), was prepared by Gd ion implantation of the parent GaN thin films deposited on sapphire substrates. The material obtained exhibits a weak ferromagnetism (FM) persisting up to 700 K. At higher Gd concentrations, the minute FM component coexists with much more pronounced Curie-type paramagnetism. In a dilute limit (x <= 0.01), the latter part is substantially reduced and the saturated FM moment reaches the value M similar to 2 mu(B)/Gd atom. Wurzitický typ nitridu galia dopovaný gadoliniem, Ga1-xGdxN (x v oboru 0.01-0.07), byl připraven ioty Gd implantovanými na mateřskou tenkou vrstvu deponovanou na safírovém substrátu. Získaný materiál vykazuje slabý feromegnetismus až do 700 K.
dcterms:title
On the magnetic properties of Gd implanted GaN On the magnetic properties of Gd implanted GaN O magnetických vlastnostech Gd implantovaného GaN
skos:prefLabel
O magnetických vlastnostech Gd implantovaného GaN On the magnetic properties of Gd implanted GaN On the magnetic properties of Gd implanted GaN
skos:notation
RIV/61389005:_____/08:00313793!RIV09-AV0-61389005
n5:aktivita
n8:P n8:Z
n5:aktivity
P(GA104/06/0642), Z(AV0Z10100521), Z(AV0Z10480505), Z(MSM6046137302)
n5:cisloPeriodika
7
n5:dodaniDat
n7:2009
n5:domaciTvurceVysledku
n12:9699414
n5:druhVysledku
n10:J
n5:duvernostUdaju
n13:S
n5:entitaPredkladatele
n18:predkladatel
n5:idSjednocenehoVysledku
384760
n5:idVysledku
RIV/61389005:_____/08:00313793
n5:jazykVysledku
n17:eng
n5:klicovaSlova
GaN; Curie-type; FM
n5:klicoveSlovo
n6:FM n6:GaN n6:Curie-type
n5:kodStatuVydavatele
US - Spojené státy americké
n5:kontrolniKodProRIV
[111B21957902]
n5:nazevZdroje
Journal of Applied Physics
n5:obor
n15:BG
n5:pocetDomacichTvurcuVysledku
1
n5:pocetTvurcuVysledku
9
n5:projekt
n11:GA104%2F06%2F0642
n5:rokUplatneniVysledku
n7:2008
n5:svazekPeriodika
103
n5:tvurceVysledku
Knížek, K. Hardtdegen, H. Jirák, Z. Maryško, M. Sofer, Z. Sedmidubský, D. Hejtmánek, J. Buchal, C. Peřina, Vratislav
n5:wos
000255043200387
n5:zamer
n9:MSM6046137302 n9:AV0Z10100521 n9:AV0Z10480505
s:issn
0021-8979
s:numberOfPages
3