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Statements

Subject Item
n2:RIV%2F61389005%3A_____%2F03%3A49033147%21RIV%2F2004%2FAV0%2FA49004%2FN
rdf:type
skos:Concept n12:Vysledek
dcterms:description
Si-C-N films were deposited on p-type Si(I 0 0) substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were controlled by the silicon fraction (5-80%) in the erosion target area for a 50% N-2+50% Ar gas mixture and by the argon concentration (0-75%) in the gas mixture at a fixed 40% silicon fraction in the erosion target area. The total pressure and the discharge current on the magnetron target were held constant at p = 0.5 Pa and I-m = I A, the substrate temperature was adjusted at T-s = 600 degreesC by an ohmic heater and the r.f. induced negative substrate bias voltage, U-b was -500 V The films, typically 1.0-1.5 mum thick, were found to be amorphous with a very smooth surface (R(a)less than or equal to0.8 nm) and good adhesion to substrates. It was shown that not only the composition of the C-Si target but also the nitrogen-argon gas mixture composition makes it possible to con Si-C-N films were deposited on p-type Si(I 0 0) substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were controlled by the silicon fraction (5-80%) in the erosion target area for a 50% N-2+50% Ar gas mixture and by the argon concentration (0-75%) in the gas mixture at a fixed 40% silicon fraction in the erosion target area. The total pressure and the discharge current on the magnetron target were held constant at p = 0.5 Pa and I-m = I A, the substrate temperature was adjusted at T-s = 600 degreesC by an ohmic heater and the r.f. induced negative substrate bias voltage, U-b was -500 V The films, typically 1.0-1.5 mum thick, were found to be amorphous with a very smooth surface (R(a)less than or equal to0.8 nm) and good adhesion to substrates. It was shown that not only the composition of the C-Si target but also the nitrogen-argon gas mixture composition makes it possible to con
dcterms:title
Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties. Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties.
skos:prefLabel
Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties. Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties.
skos:notation
RIV/61389005:_____/03:49033147!RIV/2004/AV0/A49004/N
n3:strany
1287;1294
n3:aktivita
n10:P n10:Z
n3:aktivity
P(ME 203), P(OC 527.90), Z(AV0Z1010914), Z(AV0Z1048901), Z(MSM 235200002)
n3:cisloPeriodika
8
n3:dodaniDat
n8:2004
n3:domaciTvurceVysledku
n14:9699414
n3:druhVysledku
n18:J
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n7:predkladatel
n3:idSjednocenehoVysledku
624636
n3:idVysledku
RIV/61389005:_____/03:49033147
n3:jazykVysledku
n13:eng
n3:klicovaSlova
silicon-carbon-nitride films; magnetron co-sputtering
n3:klicoveSlovo
n4:magnetron%20co-sputtering n4:silicon-carbon-nitride%20films
n3:kodStatuVydavatele
CH - Švýcarská konfederace
n3:kontrolniKodProRIV
[541D4DA58C86]
n3:nazevZdroje
DIAMOND AND RELATED MATERIALS
n3:obor
n16:BG
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
6
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n11:ME%20203 n11:OC%20527.90
n3:rokUplatneniVysledku
n8:2003
n3:svazekPeriodika
12
n3:tvurceVysledku
Peřina, Vratislav Kormunda, M. Čížek, J. Zemek, Josef Soukup, Z. Vlček, J.
n3:zamer
n15:AV0Z1048901 n15:AV0Z1010914 n15:MSM%20235200002
s:issn
0925-9635
s:numberOfPages
7