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Statements

Subject Item
n2:RIV%2F61389005%3A_____%2F00%3A49000223%21RIV%2F2003%2FAV0%2FA49003%2FN
rdf:type
n14:Vysledek skos:Concept
dcterms:description
Hundred keV B.SUP.- ions were implanted at high fluences into polyethyleneterephtalate (PET, Mylar) and the boron depth distributions were measured by the neutron depth profiling technique (NDP). Subsequently the implanted samples were annealed isochronally to determine the diffusional, trapping and detrapping behaviour of the boron atoms. The boron depth profiles of as-implanted samples differ significantly from those predicted by TRIM code. Pronounced inwardand outward profile tails point at increased mobility and redistribution of boron atoms during the implantation. Thermal annealing to the temperatures below 100 .sup.o C doesnot change the total boron content in the 1 .mu.m thick surface layer and the boron depth profiles as well. For higher annealing temperatures a significant redistribution of boron atoms is observed. Hundred keV B.SUP.- ions were implanted at high fluences into polyethyleneterephtalate (PET, Mylar) and the boron depth distributions were measured by the neutron depth profiling technique (NDP). Subsequently the implanted samples were annealed isochronally to determine the diffusional, trapping and detrapping behaviour of the boron atoms. The boron depth profiles of as-implanted samples differ significantly from those predicted by TRIM code. Pronounced inwardand outward profile tails point at increased mobility and redistribution of boron atoms during the implantation. Thermal annealing to the temperatures below 100 .sup.o C doesnot change the total boron content in the 1 .mu.m thick surface layer and the boron depth profiles as well. For higher annealing temperatures a significant redistribution of boron atoms is observed.
dcterms:title
Annealing behaviour of boron atoms implanted into polyethylene-terephtalate. Annealing behaviour of boron atoms implanted into polyethylene-terephtalate.
skos:prefLabel
Annealing behaviour of boron atoms implanted into polyethylene-terephtalate. Annealing behaviour of boron atoms implanted into polyethylene-terephtalate.
skos:notation
RIV/61389005:_____/00:49000223!RIV/2003/AV0/A49003/N
n3:strany
637;640
n3:aktivita
n12:P n12:Z
n3:aktivity
P(GA203/99/1626), P(GV202/97/K038), P(KSK1010601), Z(AV0Z1048901)
n3:cisloPeriodika
N/A
n3:dodaniDat
n8:2003
n3:domaciTvurceVysledku
n7:2734893 n7:9699414 n7:8841152 n7:1652834
n3:druhVysledku
n13:J
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
704752
n3:idVysledku
RIV/61389005:_____/00:49000223
n3:jazykVysledku
n4:eng
n3:klicovaSlova
N/A
n3:klicoveSlovo
n6:N%2FA
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[4ECF697A7FBA]
n3:nazevZdroje
Nuclear Instruments and Methods. B
n3:obor
n18:BG
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
10
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n10:GV202%2F97%2FK038 n10:KSK1010601 n10:GA203%2F99%2F1626
n3:rokUplatneniVysledku
n8:2000
n3:svazekPeriodika
166/167
n3:tvurceVysledku
Rybka, V. Hnatowicz, Vladimír Švorčík, V. Fink, D. Peřina, Vratislav Červená, Jarmila Vacík, Jiří Popok, V. Odzhaev, V. Arenholz, E.
n3:zamer
n9:AV0Z1048901
s:issn
0168-583X
s:numberOfPages
4