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Statements

Subject Item
n2:RIV%2F61388955%3A_____%2F14%3A00430103%21RIV15-GA0-61388955
rdf:type
skos:Concept n18:Vysledek
dcterms:description
Thin compact layers of TiO2 are grown by thermal oxidation of Ti, by spray pyrolysis, by electrochemical deposition, and by atomic layer deposition. These layers are used in dye-sensitized solar cells to prevent recombination of electrons from the substrate (FTO or Ti) with the hole-conducting medium at this interface. The quality of blocking is evaluated electrochemically by methylviologen, ferro/ferricyanide, and spiro-OMeTAD as the model redox probes. Two types of pinholes in the blocking layers are classified, and their effective area is quantified. Frequency-independent Mott–Schottky plots are fitted from electrochemical impedance spectroscopy. Certain films of the thicknesses of several nanometers allow distinguishing the depletion layer formation both in the TiO2 film and in the FTO substrate underneath the titania film. The excellent blocking function of thermally oxidized Ti, electrodeposited film (60 nm), and atomic-layer-deposited films (>6 nm) is documented by the relative pinhole area of less than 1%. However, the blocking behavior of electrodeposited and atomic-layer-deposited films is strongly reduced upon calcination at 500 °C. The blocking function of spray-pyrolyzed films is less good but also less sensitive to calcination. The thermally oxidized Ti is well blocking and insensitive to calcination. Thin compact layers of TiO2 are grown by thermal oxidation of Ti, by spray pyrolysis, by electrochemical deposition, and by atomic layer deposition. These layers are used in dye-sensitized solar cells to prevent recombination of electrons from the substrate (FTO or Ti) with the hole-conducting medium at this interface. The quality of blocking is evaluated electrochemically by methylviologen, ferro/ferricyanide, and spiro-OMeTAD as the model redox probes. Two types of pinholes in the blocking layers are classified, and their effective area is quantified. Frequency-independent Mott–Schottky plots are fitted from electrochemical impedance spectroscopy. Certain films of the thicknesses of several nanometers allow distinguishing the depletion layer formation both in the TiO2 film and in the FTO substrate underneath the titania film. The excellent blocking function of thermally oxidized Ti, electrodeposited film (60 nm), and atomic-layer-deposited films (>6 nm) is documented by the relative pinhole area of less than 1%. However, the blocking behavior of electrodeposited and atomic-layer-deposited films is strongly reduced upon calcination at 500 °C. The blocking function of spray-pyrolyzed films is less good but also less sensitive to calcination. The thermally oxidized Ti is well blocking and insensitive to calcination.
dcterms:title
Electrochemical Characterization of TiO2 Blocking Layers for Dye-Sensitized Solar Cells Electrochemical Characterization of TiO2 Blocking Layers for Dye-Sensitized Solar Cells
skos:prefLabel
Electrochemical Characterization of TiO2 Blocking Layers for Dye-Sensitized Solar Cells Electrochemical Characterization of TiO2 Blocking Layers for Dye-Sensitized Solar Cells
skos:notation
RIV/61388955:_____/14:00430103!RIV15-GA0-61388955
n3:aktivita
n4:I n4:P
n3:aktivity
I, P(GA13-07724S)
n3:cisloPeriodika
30
n3:dodaniDat
n14:2015
n3:domaciTvurceVysledku
n11:9704418
n3:druhVysledku
n5:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
14104
n3:idVysledku
RIV/61388955:_____/14:00430103
n3:jazykVysledku
n6:eng
n3:klicovaSlova
ANODIC OXIDATIVE HYDROLYSIS; PHOTOCATHODIC H-2 EVOLUTION; MOTT-SCHOTTKY ANALYSIS
n3:klicoveSlovo
n8:ANODIC%20OXIDATIVE%20HYDROLYSIS n8:MOTT-SCHOTTKY%20ANALYSIS n8:PHOTOCATHODIC%20H-2%20EVOLUTION
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[BD9BE9059D4A]
n3:nazevZdroje
Journal of Physical Chemistry C
n3:obor
n9:CG
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
4
n3:projekt
n15:GA13-07724S
n3:rokUplatneniVysledku
n14:2014
n3:svazekPeriodika
118
n3:tvurceVysledku
Kavan, Ladislav Tétreault, N. Moehl, T. Grätzel, M.
n3:wos
000339930900014
s:issn
1932-7447
s:numberOfPages
11
n12:doi
10.1021/jp4103614