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Statements

Subject Item
n2:RIV%2F60461373%3A22340%2F12%3A43893929%21RIV13-MSM-22340___
rdf:type
n16:Vysledek skos:Concept
dcterms:description
Thin nickel oxide layers (thickness ca 50 and 100 nm) for sensorics were fabricated by ion beam sputtering method with subsequent annealing. Ion beam formed from a mixture of argon and oxygen was used to sputter the nickel foil. Different volume ratios of argon:oxygen in mixture were used, ranging from 1:0 to 1:4. Deposited layers were characterized in as-deposited state and after annealing at temperature of 400°C. The study of electrophysical properties (sheet resistance, mobility and concentration of charge carriers) was performed by four point Van der Pauw technique and Hall measurements respectively. Hall measurements revealed majority charge carriers to be electrons. For as-deposited layers electron surface concentration decreases with increasing amount of oxygen in ion beam and is in range (5 - 23) x 10^20 m^-2 for above mentioned range of argon:oxygen ratios. According to this trend the sheet resistance of the layers increases with higher amount of oxygen in ion beam in the interval of values (40 - 420) ohm/. Thin nickel oxide layers (thickness ca 50 and 100 nm) for sensorics were fabricated by ion beam sputtering method with subsequent annealing. Ion beam formed from a mixture of argon and oxygen was used to sputter the nickel foil. Different volume ratios of argon:oxygen in mixture were used, ranging from 1:0 to 1:4. Deposited layers were characterized in as-deposited state and after annealing at temperature of 400°C. The study of electrophysical properties (sheet resistance, mobility and concentration of charge carriers) was performed by four point Van der Pauw technique and Hall measurements respectively. Hall measurements revealed majority charge carriers to be electrons. For as-deposited layers electron surface concentration decreases with increasing amount of oxygen in ion beam and is in range (5 - 23) x 10^20 m^-2 for above mentioned range of argon:oxygen ratios. According to this trend the sheet resistance of the layers increases with higher amount of oxygen in ion beam in the interval of values (40 - 420) ohm/.
dcterms:title
Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters
skos:prefLabel
Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters
skos:notation
RIV/60461373:22340/12:43893929!RIV13-MSM-22340___
n16:predkladatel
n17:orjk%3A22340
n3:aktivita
n5:S
n3:aktivity
S
n3:dodaniDat
n9:2013
n3:domaciTvurceVysledku
n11:7569033 n11:2542374 n11:8995230
n3:druhVysledku
n20:D
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n7:predkladatel
n3:idSjednocenehoVysledku
174347
n3:idVysledku
RIV/60461373:22340/12:43893929
n3:jazykVysledku
n19:eng
n3:klicovaSlova
Nickel oxide, Ion Beam Sputtering, van der Pauw
n3:klicoveSlovo
n10:Nickel%20oxide n10:Ion%20Beam%20Sputtering n10:van%20der%20Pauw
n3:kontrolniKodProRIV
[4FA502783C49]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
Ostrava
n3:nazevZdroje
NANOCON 2012 Conference Proceedings 4th International conference
n3:obor
n4:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
6
n3:rokUplatneniVysledku
n9:2012
n3:tvurceVysledku
Lavrentiev, Vasily Bejšovec, Václav Horák, Pavel Khun, Josef Vacík, Jiří Vrňata, Martin
n3:typAkce
n12:WRD
n3:zahajeniAkce
2012-10-23+02:00
s:numberOfPages
6
n21:hasPublisher
TANGER
n8:isbn
978-80-87294-32-1
n18:organizacniJednotka
22340