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Statements

Subject Item
n2:RIV%2F60461373%3A22340%2F11%3A43892102%21RIV12-MSM-22340___
rdf:type
n5:Vysledek skos:Concept
dcterms:description
Nanostructured nickel oxide layers (thickness cca 100 nm) were prepared by bombardment of nickel foil with ion beam created from a mixture of argon and oxygen. Different volume ratios of argon:oxygen mixture were used, ranging from 4:1 to 1:3. Composition of the resulting layers was analyzed by RBS, morphology by AFM and main crystal orientation of the sample by XRD. The electrophysical properties (resistivity, concentration of charge carriers) were measured by four point Van der Pauw technique and Hall measurement respectively. Prepared samples were characterized in as-deposited state and after annealing with varying temperature of treatment. Chemical composition (i.e. stoichiometry) of the as-deposited samples with different argon:oxygen ratio was related to their electrophysical parameters. Hall measurements are showing majority charge carriers to be electrons - surface concentration (0.5 - 2.3) x 1021 m-2 - suggesting prevailing metallic conductivity. Resistivity of the sample is increasing with higher amount of oxygen in gas mixture. The as-deposited layer is almost amorphous with no visible grains on AFM. Comparison of the as-deposited and annealed sample is presented. Annealing of the sample causes reorganization accentuating several crystalline orientation planes hence suggesting polycrystalline structure is formed. Annealing process also leads to significant increase of the layer transmittance. Nanostructured nickel oxide layers (thickness cca 100 nm) were prepared by bombardment of nickel foil with ion beam created from a mixture of argon and oxygen. Different volume ratios of argon:oxygen mixture were used, ranging from 4:1 to 1:3. Composition of the resulting layers was analyzed by RBS, morphology by AFM and main crystal orientation of the sample by XRD. The electrophysical properties (resistivity, concentration of charge carriers) were measured by four point Van der Pauw technique and Hall measurement respectively. Prepared samples were characterized in as-deposited state and after annealing with varying temperature of treatment. Chemical composition (i.e. stoichiometry) of the as-deposited samples with different argon:oxygen ratio was related to their electrophysical parameters. Hall measurements are showing majority charge carriers to be electrons - surface concentration (0.5 - 2.3) x 1021 m-2 - suggesting prevailing metallic conductivity. Resistivity of the sample is increasing with higher amount of oxygen in gas mixture. The as-deposited layer is almost amorphous with no visible grains on AFM. Comparison of the as-deposited and annealed sample is presented. Annealing of the sample causes reorganization accentuating several crystalline orientation planes hence suggesting polycrystalline structure is formed. Annealing process also leads to significant increase of the layer transmittance.
dcterms:title
CHARACTERIZATION OF THE NANOSTRUCTURED NICKEL OXIDE LAYERS PREPARED BY ION BEAM SPUTTERING CHARACTERIZATION OF THE NANOSTRUCTURED NICKEL OXIDE LAYERS PREPARED BY ION BEAM SPUTTERING
skos:prefLabel
CHARACTERIZATION OF THE NANOSTRUCTURED NICKEL OXIDE LAYERS PREPARED BY ION BEAM SPUTTERING CHARACTERIZATION OF THE NANOSTRUCTURED NICKEL OXIDE LAYERS PREPARED BY ION BEAM SPUTTERING
skos:notation
RIV/60461373:22340/11:43892102!RIV12-MSM-22340___
n5:predkladatel
n22:orjk%3A22340
n3:aktivita
n12:Z n12:S n12:P
n3:aktivity
P(GAP108/11/1298), S, Z(MSM6046137306)
n3:dodaniDat
n10:2012
n3:domaciTvurceVysledku
n9:8995230 n9:2542374 n9:7569033
n3:druhVysledku
n18:D
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n21:predkladatel
n3:idSjednocenehoVysledku
190003
n3:idVysledku
RIV/60461373:22340/11:43892102
n3:jazykVysledku
n17:eng
n3:klicovaSlova
Nickel oxide, Ion Beam Sputtering, Van der Pauw
n3:klicoveSlovo
n14:Ion%20Beam%20Sputtering n14:Van%20der%20Pauw n14:Nickel%20oxide
n3:kontrolniKodProRIV
[D3F62831CEA2]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
Ostrava
n3:nazevZdroje
NANOCON 2011
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
5
n3:projekt
n20:GAP108%2F11%2F1298
n3:rokUplatneniVysledku
n10:2011
n3:tvurceVysledku
BEJŠOVEC, Václav Khun, Josef Vrňata, Martin LAVRENTIEV, Vasyl Horák, Pavel
n3:typAkce
n7:EUR
n3:zahajeniAkce
2011-03-21+01:00
n3:zamer
n4:MSM6046137306
s:numberOfPages
4
n6:hasPublisher
TANGER
n19:isbn
978-80-87294-23-9
n23:organizacniJednotka
22340