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Subject Item
n2:RIV%2F60461373%3A22310%2F14%3A43897809%21RIV15-MSM-22310___
rdf:type
n6:Vysledek skos:Concept
dcterms:description
Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering. It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration. Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C - principle used for industrial production of silicon), thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless, it does not produce SiC form applicable for laboratory purposes. Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid. Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production. However, SiO2 located between the planes of growth of SiC crystal allows sintering without additional binders. Raman spectroscopy proved presence of cristobalite on the grain boundaries of SiC produced by Spark Plasma Sintering (SPS) process at 1800, 1850 °C and pressure of 60 MPa. Properties, especially chemical stability, of samples produced using SPS from SiC Norton F 1200 and SiC SINTEX 1200 commercial powders were compared with ROCAR SiSiC and SSiC commercial products. Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering. It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration. Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C - principle used for industrial production of silicon), thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless, it does not produce SiC form applicable for laboratory purposes. Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid. Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production. However, SiO2 located between the planes of growth of SiC crystal allows sintering without additional binders. Raman spectroscopy proved presence of cristobalite on the grain boundaries of SiC produced by Spark Plasma Sintering (SPS) process at 1800, 1850 °C and pressure of 60 MPa. Properties, especially chemical stability, of samples produced using SPS from SiC Norton F 1200 and SiC SINTEX 1200 commercial powders were compared with ROCAR SiSiC and SSiC commercial products.
dcterms:title
Silicon carbide for chemical application prepared by SPS method Silicon carbide for chemical application prepared by SPS method
skos:prefLabel
Silicon carbide for chemical application prepared by SPS method Silicon carbide for chemical application prepared by SPS method
skos:notation
RIV/60461373:22310/14:43897809!RIV15-MSM-22310___
n4:aktivita
n12:I
n4:aktivity
I
n4:dodaniDat
n18:2015
n4:domaciTvurceVysledku
n11:2633310
n4:druhVysledku
n10:D
n4:duvernostUdaju
n16:S
n4:entitaPredkladatele
n13:predkladatel
n4:idSjednocenehoVysledku
44842
n4:idVysledku
RIV/60461373:22310/14:43897809
n4:jazykVysledku
n8:eng
n4:klicovaSlova
impurities in silicon carbide; silicon carbide corrosion; spark plasma sintering; silicon carbide
n4:klicoveSlovo
n5:spark%20plasma%20sintering n5:silicon%20carbide n5:impurities%20in%20silicon%20carbide n5:silicon%20carbide%20corrosion
n4:kontrolniKodProRIV
[BE4F6D58F840]
n4:mistoKonaniAkce
Mikulov
n4:mistoVydani
Praha
n4:nazevZdroje
2nd International Conference on Chemical Technology - ICCT 2014
n4:obor
n14:CA
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
5
n4:rokUplatneniVysledku
n18:2014
n4:tvurceVysledku
Kubatík, Tomáš František Mušálek, Radek Brožek, Vlastimil Vilémová, Monika Mastný, Libor
n4:typAkce
n19:EUR
n4:zahajeniAkce
2014-04-07+02:00
s:numberOfPages
6
n15:hasPublisher
Česká společnost průmyslové chemie
n3:isbn
978-80-86238-61-6
n17:organizacniJednotka
22310