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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F12%3A43894446%21RIV13-GA0-22310___
rdf:type
n7:Vysledek skos:Concept
dcterms:description
In this work, features of graphene layers were studied with the aim to prepare monolayer graphene. Graphene was prepared by the method of epitaxy growth on 4H-SiC. We applied an annealing both in vacuum and in an Ar atmosphere. The formed graphene layers were analyzed by means of Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Monolayer graphene structures were prepared by an annealing at 1555 °C in an Ar atmosphere. Results produced by Raman spectroscopy were confirmed by XPS analysis. In this work, features of graphene layers were studied with the aim to prepare monolayer graphene. Graphene was prepared by the method of epitaxy growth on 4H-SiC. We applied an annealing both in vacuum and in an Ar atmosphere. The formed graphene layers were analyzed by means of Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Monolayer graphene structures were prepared by an annealing at 1555 °C in an Ar atmosphere. Results produced by Raman spectroscopy were confirmed by XPS analysis.
dcterms:title
Epitaxial graphene on 4H-SiC Epitaxial graphene on 4H-SiC
skos:prefLabel
Epitaxial graphene on 4H-SiC Epitaxial graphene on 4H-SiC
skos:notation
RIV/60461373:22310/12:43894446!RIV13-GA0-22310___
n7:predkladatel
n20:orjk%3A22310
n3:aktivita
n15:P
n3:aktivity
P(GAP108/11/0894)
n3:dodaniDat
n4:2013
n3:domaciTvurceVysledku
n12:8336679 n12:7923333 n12:2315750 n12:8252327
n3:druhVysledku
n8:D
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
134614
n3:idVysledku
RIV/60461373:22310/12:43894446
n3:jazykVysledku
n22:eng
n3:klicovaSlova
Silicon carbide; XPS analysis; Raman spectroscopy; Graphene
n3:klicoveSlovo
n5:Graphene n5:XPS%20analysis n5:Silicon%20carbide n5:Raman%20spectroscopy
n3:kontrolniKodProRIV
[B80FB802FB65]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
Brno
n3:nazevZdroje
Proceedings EDS'11 IMAPS CS International Conference
n3:obor
n19:JJ
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:projekt
n17:GAP108%2F11%2F0894
n3:rokUplatneniVysledku
n4:2012
n3:tvurceVysledku
Mišková, Linda Macháč, Petr Cichoň, Stanislav Fidler, Tomáš
n3:typAkce
n11:EUR
n3:zahajeniAkce
2012-06-28+02:00
s:numberOfPages
5
n6:hasPublisher
Vysoké učení technické v Brně
n21:isbn
978-80-214-4303-7
n9:organizacniJednotka
22310