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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F12%3A43894326%21RIV13-GA0-22310___
rdf:type
n17:Vysledek skos:Concept
dcterms:description
In this work, the features of graphene layers are studied with the aim of preparing the thinnest layers possible. The graphene layers were prepared by the annealing of Ni/SiC structures. The main advantage of this process is a relatively low temperature compared with the method of graphene epitaxial growth on SiC and short annealing times compared with the chemical vapor deposition method. We prepared graphene layers from several Ni/SiC structures in which the Ni layer thickness ranged from 1 to 200 nm. The parameters of the annealing process (temperature, rate of temperature increase, annealing time) were modified during the experiments. The formed graphene layers were analyzed by means of Raman spectroscopy. From the spectra, the basic parameters of graphene, such as the number of carbon layers and crystallinity. were determined. The annealing of the Ni(200 nm)/SiC structure at 1080 degrees C for 10 s, produced graphene in the form of 3-4 carbon monolayers. The value was verified by X-ray Photoelectron Spectroscopy (XPS). Good agreement was achieved in the results obtained using Raman spectroscopy and XPS. In this work, the features of graphene layers are studied with the aim of preparing the thinnest layers possible. The graphene layers were prepared by the annealing of Ni/SiC structures. The main advantage of this process is a relatively low temperature compared with the method of graphene epitaxial growth on SiC and short annealing times compared with the chemical vapor deposition method. We prepared graphene layers from several Ni/SiC structures in which the Ni layer thickness ranged from 1 to 200 nm. The parameters of the annealing process (temperature, rate of temperature increase, annealing time) were modified during the experiments. The formed graphene layers were analyzed by means of Raman spectroscopy. From the spectra, the basic parameters of graphene, such as the number of carbon layers and crystallinity. were determined. The annealing of the Ni(200 nm)/SiC structure at 1080 degrees C for 10 s, produced graphene in the form of 3-4 carbon monolayers. The value was verified by X-ray Photoelectron Spectroscopy (XPS). Good agreement was achieved in the results obtained using Raman spectroscopy and XPS.
dcterms:title
Synthesis of graphene on SiC substrate via Ni-silicidation reactions Synthesis of graphene on SiC substrate via Ni-silicidation reactions
skos:prefLabel
Synthesis of graphene on SiC substrate via Ni-silicidation reactions Synthesis of graphene on SiC substrate via Ni-silicidation reactions
skos:notation
RIV/60461373:22310/12:43894326!RIV13-GA0-22310___
n17:predkladatel
n20:orjk%3A22310
n3:aktivita
n18:P
n3:aktivity
P(GAP108/11/0894)
n3:cisloPeriodika
16
n3:dodaniDat
n9:2013
n3:domaciTvurceVysledku
n14:8336679 n14:2315750 n14:7923333 n14:8252327
n3:druhVysledku
n15:J
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
172963
n3:idVysledku
RIV/60461373:22310/12:43894326
n3:jazykVysledku
n12:eng
n3:klicovaSlova
Annealing; Nickel; Silicon carbide; Raman spectroscopy; Graphene
n3:klicoveSlovo
n4:Raman%20spectroscopy n4:Graphene n4:Nickel n4:Silicon%20carbide n4:Annealing
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[294FA807A6C5]
n3:nazevZdroje
Thin Solid Films
n3:obor
n10:JJ
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:projekt
n13:GAP108%2F11%2F0894
n3:rokUplatneniVysledku
n9:2012
n3:svazekPeriodika
520
n3:tvurceVysledku
Fidler, Tomáš Mišková, Linda Macháč, Petr Cichoň, Stanislav
n3:wos
000305719000019
s:issn
0040-6090
s:numberOfPages
4
n16:doi
10.1016/j.tsf.2012.03.105
n6:organizacniJednotka
22310