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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F12%3A43894045%21RIV13-GA0-22310___
rdf:type
skos:Concept n11:Vysledek
dcterms:description
Ultrathin gold layers with different thickness of (10-100 nm) on the glass substrate were obtained by Ar plasma-assisted sputtering. The effects of annealing on gold structures sputtered onto glass substrate were studied using AFM, SEM, UV-Vis methods and electrical measurements. Concentration of free charge carriers were determined from the measured resistance and the Hall constant measured by the Van der Pauw method. We have shown that post-deposition thermal treatment leads in significant change in surface morphology of the sputtered Au structures. Our results suggest that the annealing affects electrical properties of the Au coverage namely electrical sheet resistance, free carriers volume concentration, the saturation of which is in comparison with as-sputtered samples shifted towards thicker structures. While semi-conductive character of as-sputtered samples diminishes close to the Au structure thickness of ca 20 nm, in the case of the annealed structures zero-level saturation is achieved for the thickness of 60 nm. Ultrathin gold layers with different thickness of (10-100 nm) on the glass substrate were obtained by Ar plasma-assisted sputtering. The effects of annealing on gold structures sputtered onto glass substrate were studied using AFM, SEM, UV-Vis methods and electrical measurements. Concentration of free charge carriers were determined from the measured resistance and the Hall constant measured by the Van der Pauw method. We have shown that post-deposition thermal treatment leads in significant change in surface morphology of the sputtered Au structures. Our results suggest that the annealing affects electrical properties of the Au coverage namely electrical sheet resistance, free carriers volume concentration, the saturation of which is in comparison with as-sputtered samples shifted towards thicker structures. While semi-conductive character of as-sputtered samples diminishes close to the Au structure thickness of ca 20 nm, in the case of the annealed structures zero-level saturation is achieved for the thickness of 60 nm.
dcterms:title
Structural, electrical and optical studies of gold nanostructures formed by Ar plasma-assisted sputtering Structural, electrical and optical studies of gold nanostructures formed by Ar plasma-assisted sputtering
skos:prefLabel
Structural, electrical and optical studies of gold nanostructures formed by Ar plasma-assisted sputtering Structural, electrical and optical studies of gold nanostructures formed by Ar plasma-assisted sputtering
skos:notation
RIV/60461373:22310/12:43894045!RIV13-GA0-22310___
n11:predkladatel
n12:orjk%3A22310
n3:aktivita
n14:P
n3:aktivity
P(GA106/09/0125), P(GAP108/10/1106), P(KAN200100801), P(KAN400480701), P(LC06041)
n3:cisloPeriodika
20120201
n3:dodaniDat
n10:2013
n3:domaciTvurceVysledku
n4:1217496 n4:2029057 n4:7940904 n4:4827465 n4:8407029
n3:druhVysledku
n15:J
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
171820
n3:idVysledku
RIV/60461373:22310/12:43894045
n3:jazykVysledku
n18:eng
n3:klicovaSlova
Electrical and optical properties; Morphology; Nano-structures; Annealing; Sputtering; Gold
n3:klicoveSlovo
n13:Sputtering n13:Gold n13:Morphology n13:Annealing n13:Electrical%20and%20optical%20properties n13:Nano-structures
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[98BA4A97B957]
n3:nazevZdroje
Nuclear Instruments and Methods in Physics Research, Section B
n3:obor
n20:JJ
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
6
n3:projekt
n6:LC06041 n6:GA106%2F09%2F0125 n6:GAP108%2F10%2F1106 n6:KAN200100801 n6:KAN400480701
n3:rokUplatneniVysledku
n10:2012
n3:svazekPeriodika
272
n3:tvurceVysledku
Siegel, Jakub Náhlík, Josef Kvítek, Ondřej Slepička, Petr Švorčík, Václav Heitz, Johannes
n3:wos
000301159900045
s:issn
0168-583X
s:numberOfPages
5
n19:doi
10.1016/j.nimb.2011.01.063
n17:organizacniJednotka
22310