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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F12%3A43894040%21RIV13-GA0-22310___
rdf:type
n14:Vysledek skos:Concept
dcterms:description
Extremely thin gold layers were sputter deposited on glass and silicon substrates, and their thickness and morphology were studied by Rutherford backscattering (RBS) and atomic force microscopy (AFM) methods. The deposited layers change from discontinuous to continuous ones for longer deposition times. While the deposition rate on the silicon substrate is constant, nearly independent on the layer thickness, the rate on the glass substrate increases with increasing layer thickness. The observed dependence can be explained by a simple kinetic model, taking into account different sticking probabilities of gold atoms on a bare glass substrate and regions with gold coverage. Detailed analysis of the shape of the RBS gold signal shows that in the initial stages of the deposition, the gold layers on the glass substrate consist of gold islands with significantly different thicknesses. These findings were confirmed by AFM measurements, too. Gold coverage of the silicon substrate is rather homogeneous, consisting of tiny gold grains, but a pronounced worm-like structure is formed for the layer thickness at electrical continuity threshold. On the glass substrate, the gold clusters of different sizes are clearly observed. For later deposition stages, a clear tendency of the gold atoms to aggregate into larger clusters of approximately the same size is observed. At later deposition stages, gold clusters of up to 100 nm in diameter are formed. Extremely thin gold layers were sputter deposited on glass and silicon substrates, and their thickness and morphology were studied by Rutherford backscattering (RBS) and atomic force microscopy (AFM) methods. The deposited layers change from discontinuous to continuous ones for longer deposition times. While the deposition rate on the silicon substrate is constant, nearly independent on the layer thickness, the rate on the glass substrate increases with increasing layer thickness. The observed dependence can be explained by a simple kinetic model, taking into account different sticking probabilities of gold atoms on a bare glass substrate and regions with gold coverage. Detailed analysis of the shape of the RBS gold signal shows that in the initial stages of the deposition, the gold layers on the glass substrate consist of gold islands with significantly different thicknesses. These findings were confirmed by AFM measurements, too. Gold coverage of the silicon substrate is rather homogeneous, consisting of tiny gold grains, but a pronounced worm-like structure is formed for the layer thickness at electrical continuity threshold. On the glass substrate, the gold clusters of different sizes are clearly observed. For later deposition stages, a clear tendency of the gold atoms to aggregate into larger clusters of approximately the same size is observed. At later deposition stages, gold clusters of up to 100 nm in diameter are formed.
dcterms:title
Early stages of growth of gold layers sputter deposited on glass and silicon substrates Early stages of growth of gold layers sputter deposited on glass and silicon substrates
skos:prefLabel
Early stages of growth of gold layers sputter deposited on glass and silicon substrates Early stages of growth of gold layers sputter deposited on glass and silicon substrates
skos:notation
RIV/60461373:22310/12:43894040!RIV13-GA0-22310___
n14:predkladatel
n19:orjk%3A22310
n3:aktivita
n8:P n8:I
n3:aktivity
I, P(GBP108/12/G108)
n3:cisloPeriodika
241
n3:dodaniDat
n15:2013
n3:domaciTvurceVysledku
n5:2029057 n5:4827465
n3:druhVysledku
n4:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
132644
n3:idVysledku
RIV/60461373:22310/12:43894040
n3:jazykVysledku
n11:eng
n3:klicovaSlova
RBS; Silicon; Glass; Gold layer; Sputtering
n3:klicoveSlovo
n9:Gold%20layer n9:Sputtering n9:RBS n9:Silicon n9:Glass
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[F4B8CC8FD861]
n3:nazevZdroje
Nanoscale Research Letters
n3:obor
n17:JJ
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
4
n3:projekt
n12:GBP108%2F12%2FG108
n3:rokUplatneniVysledku
n15:2012
n3:svazekPeriodika
7
n3:tvurceVysledku
Hnatowicz, Vladimír Švorčík, Václav Slepička, Petr Malinský, Petr
n3:wos
000307252700001
s:issn
1931-7573
s:numberOfPages
7
n20:doi
10.1186/1556-276X-7-241
n6:organizacniJednotka
22310