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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F12%3A43893558%21RIV13-MSM-22310___
rdf:type
n4:Vysledek skos:Concept
dcterms:description
Micro-photoluminescence (mu-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that mu-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-mu m resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform. Micro-photoluminescence (mu-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that mu-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-mu m resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform.
dcterms:title
Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements
skos:prefLabel
Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements
skos:notation
RIV/60461373:22310/12:43893558!RIV13-MSM-22310___
n4:predkladatel
n5:orjk%3A22310
n6:aktivita
n12:Z n12:S
n6:aktivity
S, Z(MSM6046137302)
n6:cisloPeriodika
10
n6:dodaniDat
n7:2013
n6:domaciTvurceVysledku
n13:5250226 n13:3148262
n6:druhVysledku
n14:J
n6:duvernostUdaju
n8:S
n6:entitaPredkladatele
n9:predkladatel
n6:idSjednocenehoVysledku
154447
n6:idVysledku
RIV/60461373:22310/12:43893558
n6:jazykVysledku
n15:eng
n6:klicovaSlova
DC; HFETS; HEMTS; TRANSISTORS; PERFORMANCE; PHOTOLUMINESCENCE; HETEROSTRUCTURES; ETCHING PROCESS
n6:klicoveSlovo
n10:PHOTOLUMINESCENCE n10:ETCHING%20PROCESS n10:DC n10:HFETS n10:HEMTS n10:HETEROSTRUCTURES n10:PERFORMANCE n10:TRANSISTORS
n6:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n6:kontrolniKodProRIV
[C2E9553AE5C5]
n6:nazevZdroje
Semiconductor Science and Technology
n6:obor
n19:CA
n6:pocetDomacichTvurcuVysledku
2
n6:pocetTvurcuVysledku
10
n6:rokUplatneniVysledku
n7:2012
n6:svazekPeriodika
27
n6:tvurceVysledku
Luth, H. Grutzmacher, D. Kordos, P. Gregušová, D. Marso, M. Hardtdegen, H. Sofer, Zdeněk Šimek, Petr Mikulics, M. Trellenkamp, S.
n6:wos
000309111800010
n6:zamer
n20:MSM6046137302
s:issn
0268-1242
s:numberOfPages
4
n18:doi
10.1088/0268-1242/27/10/105008
n16:organizacniJednotka
22310