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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F12%3A43893549%21RIV13-GA0-22310___
rdf:type
skos:Concept n12:Vysledek
dcterms:description
Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001) as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS) value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 x 10(-2). Omega cm with carrier density of 1.3 x 10(18) cm(-3) and electron mobility of 40 cm(2) v(-1) s(-1). Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001) as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS) value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 x 10(-2). Omega cm with carrier density of 1.3 x 10(18) cm(-3) and electron mobility of 40 cm(2) v(-1) s(-1).
dcterms:title
ZnO thin films prepared by spray-pyrolysis technique from organo-metallic precursor ZnO thin films prepared by spray-pyrolysis technique from organo-metallic precursor
skos:prefLabel
ZnO thin films prepared by spray-pyrolysis technique from organo-metallic precursor ZnO thin films prepared by spray-pyrolysis technique from organo-metallic precursor
skos:notation
RIV/60461373:22310/12:43893549!RIV13-GA0-22310___
n12:predkladatel
n13:orjk%3A22310
n3:aktivita
n15:S n15:P
n3:aktivity
P(GA104/09/0621), S
n3:cisloPeriodika
2
n3:dodaniDat
n16:2013
n3:domaciTvurceVysledku
n6:6562108 n6:3148262 n6:6541690 n6:4982614
n3:druhVysledku
n18:J
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
182769
n3:idVysledku
RIV/60461373:22310/12:43893549
n3:jazykVysledku
n8:eng
n3:klicovaSlova
Zinc acetyl-acetonate; Spray-pyrolysis; Thin films; Zinc oxide
n3:klicoveSlovo
n7:Spray-pyrolysis n7:Zinc%20acetyl-acetonate n7:Zinc%20oxide n7:Thin%20films
n3:kodStatuVydavatele
CZ - Česká republika
n3:kontrolniKodProRIV
[69C46C33CD8A]
n3:nazevZdroje
Ceramics-Silikáty
n3:obor
n17:CA
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
5
n3:projekt
n9:GA104%2F09%2F0621
n3:rokUplatneniVysledku
n16:2012
n3:svazekPeriodika
56
n3:tvurceVysledku
Sedmidubský, David Mikulics, Martin Nádherný, Ladislav Jankovský, Ondřej Sofer, Zdeněk
n3:wos
000307678000005
s:issn
0862-5468
s:numberOfPages
5
n10:organizacniJednotka
22310