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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F09%3A00021758%21RIV10-MSM-22310___
rdf:type
n3:Vysledek skos:Concept
dcterms:description
We present a growth of Ga1-xMnxN layers by MOVPE. GaN templates were grown on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers, (MCp)2Mn was used as a Mn - precursor. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimal partially coalesced layer of pure GaN. A direct deposition of GaN:Mn layer on low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films. We present a growth of Ga1-xMnxN layers by MOVPE. GaN templates were grown on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers, (MCp)2Mn was used as a Mn - precursor. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimal partially coalesced layer of pure GaN. A direct deposition of GaN:Mn layer on low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films.
dcterms:title
GaN:Mn layers growth by MOVPE GaN:Mn layers growth by MOVPE
skos:prefLabel
GaN:Mn layers growth by MOVPE GaN:Mn layers growth by MOVPE
skos:notation
RIV/60461373:22310/09:00021758!RIV10-MSM-22310___
n6:aktivita
n9:Z n9:P
n6:aktivity
P(GA104/06/0642), Z(MSM6046137302)
n6:dodaniDat
n12:2010
n6:domaciTvurceVysledku
n13:3330095 n13:6541690 n13:3148262
n6:druhVysledku
n20:D
n6:duvernostUdaju
n14:S
n6:entitaPredkladatele
n21:predkladatel
n6:idSjednocenehoVysledku
315956
n6:idVysledku
RIV/60461373:22310/09:00021758
n6:jazykVysledku
n18:eng
n6:klicovaSlova
dilute magnetic semiconductors; GaN; MOVPE; magnetic properties
n6:klicoveSlovo
n7:MOVPE n7:GaN n7:dilute%20magnetic%20semiconductors n7:magnetic%20properties
n6:kontrolniKodProRIV
[79510212178F]
n6:mistoKonaniAkce
Rožnov pod Radhoštěm
n6:mistoVydani
Trenčín
n6:nazevZdroje
Vrstvy a povlaky 2009
n6:obor
n16:CA
n6:pocetDomacichTvurcuVysledku
3
n6:pocetTvurcuVysledku
8
n6:projekt
n19:GA104%2F06%2F0642
n6:rokUplatneniVysledku
n12:2009
n6:tvurceVysledku
Sofer, Zdeněk Jurek, Karel Stejskal, Josef Václavů, M. Maryško, M. Hejtmánek, J. Sedmidubský, David Macková, A.
n6:typAkce
n11:EUR
n6:zahajeniAkce
2009-09-30+02:00
n6:zamer
n22:MSM6046137302
s:numberOfPages
4
n8:hasPublisher
Digital Graphic
n17:isbn
978-80-969310-9-5
n4:organizacniJednotka
22310