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Statements

Subject Item

n2:RIV%2F60461373%3A22310%2F09%3A00021577%21RIV10-MSM-22310___

rdf:type

n5:Vysledek skos:Concept

dcterms:description

We directly compared three nickel-based metallizations on Si-face of n-type 4H-SiC: pure nickel and nickel silicides prepared by the evaporation of nickel and silicon layers with overall composition corresponding to NiSi and Ni2Si. The degree of interaction between the metallizations and silicon carbide was determined by the AFM (Atomic Force Microscopy) scanning of the SiC substrate after the selective etching of the metallizations. The optimal annealing temperature was 960°C for all the metallizations; the values of contact resistivity were 6?7x10-5 cm2. The morphology of Ni (50 nm) contacts was free of defects at all annealing temperatures, but the reaction during annealing consumed approximately 60 nm of SiC. NiSi and Ni2Si metallizations altered the surface of the SiC substrate, but no significant decomposition was detected by AFM. NiSi contacts had unsatisfactory droplet-like morphology after annealing at 960 and 1065°C. Annealed Ni2Si contacts contained pores, but their formation was prevente We directly compared three nickel-based metallizations on Si-face of n-type 4H-SiC: pure nickel and nickel silicides prepared by the evaporation of nickel and silicon layers with overall composition corresponding to NiSi and Ni2Si. The degree of interaction between the metallizations and silicon carbide was determined by the AFM (Atomic Force Microscopy) scanning of the SiC substrate after the selective etching of the metallizations. The optimal annealing temperature was 960°C for all the metallizations; the values of contact resistivity were 6?7x10-5 cm2. The morphology of Ni (50 nm) contacts was free of defects at all annealing temperatures, but the reaction during annealing consumed approximately 60 nm of SiC. NiSi and Ni2Si metallizations altered the surface of the SiC substrate, but no significant decomposition was detected by AFM. NiSi contacts had unsatisfactory droplet-like morphology after annealing at 960 and 1065°C. Annealed Ni2Si contacts contained pores, but their formation was prevente

dcterms:title

Ni-based ohmic contacts on 4H-SiC of n-type Ni-based ohmic contacts on 4H-SiC of n-type

skos:prefLabel

Ni-based ohmic contacts on 4H-SiC of n-type Ni-based ohmic contacts on 4H-SiC of n-type

skos:notation

RIV/60461373:22310/09:00021577!RIV10-MSM-22310___

n3:aktivita

n12:S

n3:aktivity

S

n3:dodaniDat

n8:2010

n3:domaciTvurceVysledku

n10:2315750

n3:druhVysledku

n16:D

n3:duvernostUdaju

n9:S

n3:entitaPredkladatele

n14:predkladatel

n3:idSjednocenehoVysledku

329557

n3:idVysledku

RIV/60461373:22310/09:00021577

n3:jazykVysledku

n18:eng

n3:klicovaSlova

4H-SiC; Ohmic contacts; Nickel; AFM

n3:klicoveSlovo

n4:4H-SiC n4:AFM n4:Ohmic%20contacts n4:Nickel

n3:kontrolniKodProRIV

[80F40D8D19B2]

n3:mistoKonaniAkce

Brno

n3:mistoVydani

Brno

n3:nazevZdroje

Proceedings Electronic Devices and Systems IMAPS CS International Conference 2009

n3:obor

n15:JA

n3:pocetDomacichTvurcuVysledku

1

n3:pocetTvurcuVysledku

2

n3:rokUplatneniVysledku

n8:2009

n3:tvurceVysledku

Machač, Petr Barda, Bohumil

n3:typAkce

n19:EUR

n3:zahajeniAkce

2009-09-02+02:00

s:numberOfPages

5

n20:hasPublisher

Vysoké učení technické v Brně

n17:isbn

978-80-214-3933-7

n7:organizacniJednotka

22310