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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F08%3A00020540%21RIV09-MSM-22310___
rdf:type
skos:Concept n11:Vysledek
dcterms:description
Properties of Er3+ and Er3++Yb3+ doped GaN layers investigated using the transmittance measurement Properties of Er3+ and Er3++Yb3+ doped GaN layers investigated using the transmittance measurement Properties of Er3+ and Er3++Yb3+ doped GaN layers investigated using the transmittance measurement
dcterms:title
Properties of Er3+ and Er3++Yb3+ doped GaN layers investigated using the transmittance measurement Properties of Er3+ and Er3++Yb3+ doped GaN layers investigated using the transmittance measurement Properties of Er3+ and Er3++Yb3+ doped GaN layers investigated using the transmittance measurement
skos:prefLabel
Properties of Er3+ and Er3++Yb3+ doped GaN layers investigated using the transmittance measurement Properties of Er3+ and Er3++Yb3+ doped GaN layers investigated using the transmittance measurement Properties of Er3+ and Er3++Yb3+ doped GaN layers investigated using the transmittance measurement
skos:notation
RIV/60461373:22310/08:00020540!RIV09-MSM-22310___
n3:aktivita
n14:S
n3:aktivity
S
n3:dodaniDat
n4:2009
n3:domaciTvurceVysledku
n17:7662211
n3:druhVysledku
n8:D
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
390488
n3:idVysledku
RIV/60461373:22310/08:00020540
n3:jazykVysledku
n9:eng
n3:klicovaSlova
Er3+; GaN
n3:klicoveSlovo
n7:GaN n7:Er3%2B
n3:kontrolniKodProRIV
[A2115C8770F6]
n3:mistoKonaniAkce
Prague, Czech Republic
n3:mistoVydani
Prague, Czech Republic
n3:nazevZdroje
Photonics Prague 2008, The 6th International Conference on Photonics, Devices and Systems
n3:obor
n18:JJ
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
2
n3:rokUplatneniVysledku
n4:2008
n3:tvurceVysledku
Prajzler, Václav Špirková, Jarmila
n3:typAkce
n20:WRD
n3:zahajeniAkce
2008-10-27+01:00
s:numberOfPages
1
n15:hasPublisher
České vysoké učení technické v Praze
n10:isbn
978-80-86742-25-0
n19:organizacniJednotka
22310