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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F08%3A00020537%21RIV09-MSM-22310___
rdf:type
n17:Vysledek skos:Concept
dcterms:description
Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Usi Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement. Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement.
dcterms:title
Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement. Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement. Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement.
skos:prefLabel
Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement. Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement. Investigation Properties of GaN Layers Doped with Er3+ and Er3+-Yb3+ Ions Using the Transmittance Measurement.
skos:notation
RIV/60461373:22310/08:00020537!RIV09-MSM-22310___
n3:aktivita
n6:S
n3:aktivity
S
n3:dodaniDat
n15:2009
n3:domaciTvurceVysledku
n11:7662211
n3:druhVysledku
n13:D
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n5:predkladatel
n3:idSjednocenehoVysledku
373241
n3:idVysledku
RIV/60461373:22310/08:00020537
n3:jazykVysledku
n10:eng
n3:klicovaSlova
GaN; Transmittance; Er3+
n3:klicoveSlovo
n12:Transmittance n12:GaN n12:Er3%2B
n3:kontrolniKodProRIV
[21349C933343]
n3:mistoKonaniAkce
Bellingham, UK
n3:mistoVydani
Bellingham
n3:nazevZdroje
Photonics, Devices, and Systems
n3:obor
n16:JJ
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
2
n3:rokUplatneniVysledku
n15:2008
n3:tvurceVysledku
Prajzler, Václav Špirková, Jarmila
n3:typAkce
n8:WRD
n3:zahajeniAkce
2008-08-12+02:00
s:issn
0277-786X
s:numberOfPages
6
n18:hasPublisher
Bellingham
n14:organizacniJednotka
22310