This HTML5 document contains 49 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n12http://localhost/temp/predkladatel/
n3http://purl.org/net/nknouf/ns/bibtex#
n14http://linked.opendata.cz/resource/domain/vavai/projekt/
n9http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n17http://linked.opendata.cz/ontology/domain/vavai/
n19https://schema.org/
n7http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n4http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n6http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n13http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F60461373%3A22310%2F07%3A00018272%21RIV08-MSM-22310___/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n21http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n11http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F07%3A00018272%21RIV08-MSM-22310___
rdf:type
skos:Concept n17:Vysledek
dcterms:description
On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 °C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr. On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 °C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr. On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 °C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr.
dcterms:title
Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE Thermodynamic aspects of GaN:Cr epitaxial layers grown by MOVPE Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE
skos:prefLabel
Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE Thermodynamic aspects of GaN:Cr epitaxial layers grown by MOVPE Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE
skos:notation
RIV/60461373:22310/07:00018272!RIV08-MSM-22310___
n4:strany
79-84
n4:aktivita
n16:Z n16:P
n4:aktivity
P(GA104/06/0642), Z(MSM6046137302)
n4:dodaniDat
n11:2008
n4:domaciTvurceVysledku
n9:3330095 n9:3148262 n9:6541690 n9:5395097
n4:druhVysledku
n21:D
n4:duvernostUdaju
n15:S
n4:entitaPredkladatele
n13:predkladatel
n4:idSjednocenehoVysledku
454728
n4:idVysledku
RIV/60461373:22310/07:00018272
n4:jazykVysledku
n10:cze
n4:klicovaSlova
GaN; dilute magnetic semiconductors; spintronics; thermodynamics
n4:klicoveSlovo
n6:dilute%20magnetic%20semiconductors n6:thermodynamics n6:spintronics n6:GaN
n4:kontrolniKodProRIV
[06BF53D8B073]
n4:mistoVydani
Plzeň
n4:nazevZdroje
Sborník příspěvků VI. ročníku konference Vrstvy a povlaky 2007
n4:obor
n18:CA
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
4
n4:projekt
n14:GA104%2F06%2F0642
n4:rokUplatneniVysledku
n11:2007
n4:tvurceVysledku
Sofer, Zdeněk Stejskal, Josef Sedmidubský, David Leitner, Jindřich
n4:zamer
n7:MSM6046137302
s:numberOfPages
5
n3:hasPublisher
Digital Graphic
n19:isbn
978-80-969310-4-0
n12:organizacniJednotka
22310