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Namespace Prefixes

PrefixIRI
n11http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n9http://purl.org/net/nknouf/ns/bibtex#
n5http://localhost/temp/predkladatel/
n19http://linked.opendata.cz/resource/domain/vavai/projekt/
n12http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n7http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F60461373%3A22310%2F06%3A00017021%21RIV07-GA0-22310___/
n20http://linked.opendata.cz/ontology/domain/vavai/
n17https://schema.org/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n16http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n15http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n21http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n4http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n13http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F06%3A00017021%21RIV07-GA0-22310___
rdf:type
n20:Vysledek skos:Concept
dcterms:description
The main focus of this work concerns the material, technological and some theoretical aspects of dilute magnetic semiconductors (DMS) based on the transition metal doped GaN thin film. The epitaxial thin layers of GaN with wurtzite structure was deposited by MOVPE technique on monocrystaline c-plane sappphire substrates at temperatures 1000 - 1100oC. The gaseous metalorganic precursors Ga(CH3)3 and amonia were used as sources of the components. Due to a relatively large lattice mismatch between Al2O3 and GaN a short accommodation period at 550oC characterized by a deposition of a polycrystalline buffer layers of GaN was included prior to the epitaxial growth. The prepared epitaxial layers were examined by means X-ray diffraction, scanning electron microscopy (SEM),atomic force microscopy (AFM),electron microprobe analysis (EMA). As a theoretical tool for the prediction of appropriate deposition conditions of GaN:Mn epitaxial layers in situ, calculations of equilibrium solubility limits o V této práci se zabýváme přípravou epitaxních vrstev GaN a teoretickými výpočty pásové struktury GaN:Mn. Rovnovážná rozpustnost Mn v GaN bylo vypočteno pomocí ab-initio metod z elektronové struktury. The main focus of this work concerns the material, technological and some theoretical aspects of dilute magnetic semiconductors (DMS) based on the transition metal doped GaN thin film. The epitaxial thin layers of GaN with wurtzite structure was deposited by MOVPE technique on monocrystaline c-plane sappphire substrates at temperatures 1000 - 1100oC. The gaseous metalorganic precursors Ga(CH3)3 and amonia were used as sources of the components. Due to a relatively large lattice mismatch between Al2O3 and GaN a short accommodation period at 550oC characterized by a deposition of a polycrystalline buffer layers of GaN was included prior to the epitaxial growth. The prepared epitaxial layers were examined by means X-ray diffraction, scanning electron microscopy (SEM),atomic force microscopy (AFM),electron microprobe analysis (EMA). As a theoretical tool for the prediction of appropriate deposition conditions of GaN:Mn epitaxial layers in situ, calculations of equilibrium solubility limits o
dcterms:title
GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS GaN:Mn tenké epitaxní vrstvy pro aplikace ve spintronice
skos:prefLabel
GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS GaN:Mn tenké epitaxní vrstvy pro aplikace ve spintronice
skos:notation
RIV/60461373:22310/06:00017021!RIV07-GA0-22310___
n3:strany
128-131
n3:aktivita
n15:P
n3:aktivity
P(GA104/06/0642)
n3:dodaniDat
n13:2007
n3:domaciTvurceVysledku
n12:3148262 n12:5395097 n12:3330095 n12:5094763 n12:6541690
n3:druhVysledku
n4:D
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n7:predkladatel
n3:idSjednocenehoVysledku
476703
n3:idVysledku
RIV/60461373:22310/06:00017021
n3:jazykVysledku
n10:eng
n3:klicovaSlova
GaN; epitaxial layers; spintronic; electronic structure; ab-initio
n3:klicoveSlovo
n16:electronic%20structure n16:spintronic n16:epitaxial%20layers n16:GaN n16:ab-initio
n3:kontrolniKodProRIV
[3EF13B165AE0]
n3:mistoKonaniAkce
Rožkov pod Radhoštěm
n3:mistoVydani
Trenčín
n3:nazevZdroje
Zborník prednášok Vrstvy a povlaky 2006
n3:obor
n21:CA
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:projekt
n19:GA104%2F06%2F0642
n3:rokUplatneniVysledku
n13:2006
n3:tvurceVysledku
Leitner, Jindřich Sedmidubský, David Sofer, Zdeněk Stejskal, Josef Strejc, Aleš
n3:typAkce
n11:EUR
n3:zahajeniAkce
2006-10-10+02:00
s:numberOfPages
4
n9:hasPublisher
Digital Graphic
n17:isbn
80-969310-2-4
n5:organizacniJednotka
22310