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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F05%3A00014149%21RIV06-MSM-22310___
rdf:type
skos:Concept n13:Vysledek
dcterms:description
Usually, in the MOVPE of group III nitrides, the group III and ammonia are injected separately into the reactor in order to prevent pre-reactions. The group V is injected closer to the heated substrate to increase the group V concentration near the substrate surface. We however have inverted the source gas supply in order to reduce parasitic deposition and to increase reactor uptimes and process efficiency [1]. However it is quite clear, that growth optimization with respect to uniformity needs a different strategy if the inlet geometry is changed [2]. Basically the uniformity is determined by the convective flow of the growth determining species into the reactor and the diffusive flow towards the substrate. In a horizontal reactor forced convection takes place parallel to the substrate surface and diffusion perpendicular to it. Using this knowledge, the optimization of the conventional process with respect to uniformity was already carried out [3]. In this paper we will present the optimization for t Usually, in the MOVPE of group III nitrides, the group III and ammonia are injected separately into the reactor in order to prevent pre-reactions. The group V is injected closer to the heated substrate to increase the group V concentration near the substrate surface. We however have inverted the source gas supply in order to reduce parasitic deposition and to increase reactor uptimes and process efficiency [1]. However it is quite clear, that growth optimization with respect to uniformity needs a different strategy if the inlet geometry is changed [2]. Basically the uniformity is determined by the convective flow of the growth determining species into the reactor and the diffusive flow towards the substrate. In a horizontal reactor forced convection takes place parallel to the substrate surface and diffusion perpendicular to it. Using this knowledge, the optimization of the conventional process with respect to uniformity was already carried out [3]. In this paper we will present the optimization for t Optimalizace vysokoteplotního růstu GaN užitím N2 jako nosného plynu
dcterms:title
Optimalizace vysokoteplotního růstu GaN užitím N2 jako nosného plynu Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas
skos:prefLabel
Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas Optimalizace vysokoteplotního růstu GaN užitím N2 jako nosného plynu
skos:notation
RIV/60461373:22310/05:00014149!RIV06-MSM-22310___
n3:aktivita
n15:Z n15:P
n3:aktivity
P(GA104/03/0387), Z(MSM6046137302)
n3:dodaniDat
n9:2006
n3:domaciTvurceVysledku
n8:3148262
n3:druhVysledku
n18:O
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
537093
n3:idVysledku
RIV/60461373:22310/05:00014149
n3:jazykVysledku
n6:eng
n3:klicovaSlova
GaN; MOVPE; Růst; Dusík; Nosný plyn
n3:klicoveSlovo
n11:MOVPE n11:R%C5%AFst n11:GaN n11:Dus%C3%ADk n11:Nosn%C3%BD%20plyn
n3:kontrolniKodProRIV
[4A95F42B90C0]
n3:obor
n10:CA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
6
n3:projekt
n17:GA104%2F03%2F0387
n3:rokUplatneniVysledku
n9:2005
n3:tvurceVysledku
Steins, Roger Cho, Yong Suk Ahe, Martina von der Kaluza, Nicoleta Hardtdegen, Hilde Sofer, Zdeněk
n3:zamer
n7:MSM6046137302
n12:organizacniJednotka
22310