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Statements

Subject Item
n2:RIV%2F60461373%3A22310%2F05%3A00013775%21RIV06-MSM-22310___
rdf:type
skos:Concept n9:Vysledek
dcterms:description
We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN (11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (~10-3 A/cm2). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN (11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (~10-3 A/cm2). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech
dcterms:title
Growth and properties of GaN and AlN layers on silver substrates Growth and properties of GaN and AlN layers on silver substrates Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech
skos:prefLabel
Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech Growth and properties of GaN and AlN layers on silver substrates Growth and properties of GaN and AlN layers on silver substrates
skos:notation
RIV/60461373:22310/05:00013775!RIV06-MSM-22310___
n4:strany
212109
n4:aktivita
n15:Z n15:P
n4:aktivity
P(GA104/03/0387), Z(MSM6046137302)
n4:cisloPeriodika
87
n4:dodaniDat
n5:2006
n4:domaciTvurceVysledku
n14:3148262 n14:3330095
n4:druhVysledku
n18:J
n4:duvernostUdaju
n13:S
n4:entitaPredkladatele
n12:predkladatel
n4:idSjednocenehoVysledku
522954
n4:idVysledku
RIV/60461373:22310/05:00013775
n4:jazykVysledku
n17:eng
n4:klicovaSlova
GaN; AlN; Metal Substrate; Silver Substrate; MBE; Grown; Device; Schottky Diod
n4:klicoveSlovo
n6:Grown n6:Metal%20Substrate n6:Silver%20Substrate n6:Device n6:Schottky%20Diod n6:GaN n6:AlN n6:MBE
n4:kodStatuVydavatele
US - Spojené státy americké
n4:kontrolniKodProRIV
[6CAEB77FB7E5]
n4:nazevZdroje
Applied Physics Letters
n4:obor
n16:BM
n4:pocetDomacichTvurcuVysledku
2
n4:pocetTvurcuVysledku
9
n4:projekt
n10:GA104%2F03%2F0387
n4:rokUplatneniVysledku
n5:2005
n4:tvurceVysledku
Marso, Michel Stejskal, Josef Kočan, Martin Javorka, Petr Kordoš, Petr Mikulics, Martin Lüth, Hans Rizzi, Angela Sofer, Zdeněk
n4:zamer
n19:MSM6046137302
s:issn
0003-6951
s:numberOfPages
3
n11:organizacniJednotka
22310