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Statements

Subject Item
n2:RIV%2F60162694%3AG43__%2F10%3A00424281%21RIV11-GA0-G43_____
rdf:type
n21:Vysledek skos:Concept
dcterms:description
Lifetime of power electronics is seriously limited by the thermal ambience and therefore a detailed thermal design on power electronics is desirable. For evaluating the lifetime of power electronics, information is required on the thermal cycling of the power electronics components. Especially the semiconductors are vulnerable to a high temperature and thermal cycling. In this paper the combined modeling and simulation of electrical and thermal behavior of semiconductors is discussed. The models for the semiconductors, being the MOSFET, IGBT and DIODE are briefly introduced and their most important parameters are highlighted. The thermal models for semiconductors are discussed and how they are connected to the semiconductors. A series of measurements are shown for the MOSFET, IGBT and DIODE and these results are compared with simulations. Lifetime of power electronics is seriously limited by the thermal ambience and therefore a detailed thermal design on power electronics is desirable. For evaluating the lifetime of power electronics, information is required on the thermal cycling of the power electronics components. Especially the semiconductors are vulnerable to a high temperature and thermal cycling. In this paper the combined modeling and simulation of electrical and thermal behavior of semiconductors is discussed. The models for the semiconductors, being the MOSFET, IGBT and DIODE are briefly introduced and their most important parameters are highlighted. The thermal models for semiconductors are discussed and how they are connected to the semiconductors. A series of measurements are shown for the MOSFET, IGBT and DIODE and these results are compared with simulations.
dcterms:title
Lifetime estimation with thermal models of semiconductors. Lifetime estimation with thermal models of semiconductors.
skos:prefLabel
Lifetime estimation with thermal models of semiconductors. Lifetime estimation with thermal models of semiconductors.
skos:notation
RIV/60162694:G43__/10:00424281!RIV11-GA0-G43_____
n4:aktivita
n15:P
n4:aktivity
P(GA102/09/0013)
n4:dodaniDat
n5:2011
n4:domaciTvurceVysledku
n8:3891224
n4:druhVysledku
n7:D
n4:duvernostUdaju
n18:S
n4:entitaPredkladatele
n9:predkladatel
n4:idSjednocenehoVysledku
268482
n4:idVysledku
RIV/60162694:G43__/10:00424281
n4:jazykVysledku
n6:eng
n4:klicovaSlova
Modelling; Power semiconductor device; Thermal design.
n4:klicoveSlovo
n16:Modelling n16:Power%20semiconductor%20device n16:Thermal%20design.
n4:kontrolniKodProRIV
[92EBEB1FA199]
n4:mistoKonaniAkce
Atlanta, USA
n4:mistoVydani
Atlanta, USA
n4:nazevZdroje
Proceedings of the IEEE Energy Conversion Congress & Expo (ECCE 2010)
n4:obor
n20:KA
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
3
n4:projekt
n14:GA102%2F09%2F0013
n4:rokUplatneniVysledku
n5:2010
n4:tvurceVysledku
Leuchter, Jan van Duijsen, P. Bauer, Pavel
n4:typAkce
n19:WRD
n4:zahajeniAkce
2010-01-01+01:00
s:numberOfPages
8
n11:hasPublisher
IEEE
n17:isbn
978-1-4244-5286-6
n13:organizacniJednotka
G43