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Statements

Subject Item
n2:RIV%2F60076658%3A12520%2F12%3A43883582%21RIV13-MSM-12520___
rdf:type
n11:Vysledek skos:Concept
dcterms:description
The electronic and magnetic properties of Ga1-xCrxP dilute magnetic semiconductor (DMS) compound for dopant concentration, x = 0.25, 0.125, 0.06 and 0.03 have been investigated using WIEN2k implementation of full potential linearized augmented plane wave (FPLAPW) method in order to seek out the possibility of new dilute magnetic semiconductor (DMS) compound within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the Cr doping in GaP induces the ferromagnetism and originates a half metallic (HM) gap at Fermi level (E-F) in minority spin channel (MIC) for all concentrations. The half metallicity is originated by the hybridization of Cr-d states with P-p states. Moreover, the half metallicity remains intact for all Cr-concentration. We also observed that the HM gap increases with the reduction in doping concentration from 0.25 to 0.03. The total magnetic moment of this compound is mainly due to Cr-d states present at E-F. A small induced magnetic moment on other non magnetic atoms (Ga and P) for all doping concentrations is a consequence of p-d hybridization between Cr-d and P-p states. The electronic and magnetic properties of Ga1-xCrxP dilute magnetic semiconductor (DMS) compound for dopant concentration, x = 0.25, 0.125, 0.06 and 0.03 have been investigated using WIEN2k implementation of full potential linearized augmented plane wave (FPLAPW) method in order to seek out the possibility of new dilute magnetic semiconductor (DMS) compound within generalized gradient approximation (GGA) as exchange-correlation (XC) potential. The calculated results show that the Cr doping in GaP induces the ferromagnetism and originates a half metallic (HM) gap at Fermi level (E-F) in minority spin channel (MIC) for all concentrations. The half metallicity is originated by the hybridization of Cr-d states with P-p states. Moreover, the half metallicity remains intact for all Cr-concentration. We also observed that the HM gap increases with the reduction in doping concentration from 0.25 to 0.03. The total magnetic moment of this compound is mainly due to Cr-d states present at E-F. A small induced magnetic moment on other non magnetic atoms (Ga and P) for all doping concentrations is a consequence of p-d hybridization between Cr-d and P-p states.
dcterms:title
Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit
skos:prefLabel
Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit
skos:notation
RIV/60076658:12520/12:43883582!RIV13-MSM-12520___
n11:predkladatel
n13:orjk%3A12520
n3:aktivita
n7:P
n3:aktivity
P(ED2.1.00/01.0024)
n3:cisloPeriodika
Neuveden
n3:dodaniDat
n14:2013
n3:domaciTvurceVysledku
Reshak, Ali Hussain
n3:druhVysledku
n8:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
134166
n3:idVysledku
RIV/60076658:12520/12:43883582
n3:jazykVysledku
n9:eng
n3:klicovaSlova
DMS; Spintronics; GGA; FPLAPW method; DFT; Half metallicity; PHASE; FERROMAGNETISM
n3:klicoveSlovo
n5:PHASE n5:FPLAPW%20method n5:Half%20metallicity n5:DFT n5:FERROMAGNETISM n5:DMS n5:GGA n5:Spintronics
n3:kodStatuVydavatele
CH - Švýcarská konfederace
n3:kontrolniKodProRIV
[69194AD36465]
n3:nazevZdroje
JOURNAL OF ALLOYS AND COMPOUNDS
n3:obor
n15:BH
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
4
n3:projekt
n6:ED2.1.00%2F01.0024
n3:rokUplatneniVysledku
n14:2012
n3:svazekPeriodika
536
n3:tvurceVysledku
Kashyap, Manish K. Reshak, Ali Hussain Singh, Mukhtiyar Saini, Hardev S.
n3:wos
000306691900035
s:issn
0925-8388
s:numberOfPages
5
n17:doi
10.1016/j.jallcom.2012.04.122
n19:organizacniJednotka
12520