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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F14%3A43923268%21RIV15-MSM-23640___
rdf:type
skos:Concept n22:Vysledek
dcterms:description
Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of potential applications such as biosensors or acoustic resonator devices. ZnO normally crystallizes in the wurtzite structure with c-axis (001) preferred orientation. However, for bio-sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of such a shear horizontal wave, a-axis film textures such as the (110) or (100) is necessary. This work is focused on the preferred orientation control of ZnO film prepared by RF magnetron sputtering. It is found that preferred orientation can be controlled by substrate bias and substrate temperature during deposition without the use of expensive crystalline substrates. There are three areas of operating parameters when the structure of the ZnO films is dominated by different preferred orientation. Moreover, the film annealing was performed to enhance the film structure. Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of potential applications such as biosensors or acoustic resonator devices. ZnO normally crystallizes in the wurtzite structure with c-axis (001) preferred orientation. However, for bio-sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of such a shear horizontal wave, a-axis film textures such as the (110) or (100) is necessary. This work is focused on the preferred orientation control of ZnO film prepared by RF magnetron sputtering. It is found that preferred orientation can be controlled by substrate bias and substrate temperature during deposition without the use of expensive crystalline substrates. There are three areas of operating parameters when the structure of the ZnO films is dominated by different preferred orientation. Moreover, the film annealing was performed to enhance the film structure.
dcterms:title
Self-texture control of Zno films prepared by reactive RF magnetron sputtering Self-texture control of Zno films prepared by reactive RF magnetron sputtering
skos:prefLabel
Self-texture control of Zno films prepared by reactive RF magnetron sputtering Self-texture control of Zno films prepared by reactive RF magnetron sputtering
skos:notation
RIV/49777513:23640/14:43923268!RIV15-MSM-23640___
n4:aktivita
n14:P
n4:aktivity
P(ED2.1.00/03.0088)
n4:dodaniDat
n7:2015
n4:domaciTvurceVysledku
n6:1596055 n6:8688117 n6:4963768 n6:8498989 n6:1889788
n4:druhVysledku
n20:D
n4:duvernostUdaju
n5:S
n4:entitaPredkladatele
n21:predkladatel
n4:idSjednocenehoVysledku
44362
n4:idVysledku
RIV/49777513:23640/14:43923268
n4:jazykVysledku
n17:eng
n4:klicovaSlova
thin films; magnetron sputtering; preferred orientation; structure; ZnO
n4:klicoveSlovo
n13:structure n13:thin%20films n13:ZnO n13:preferred%20orientation n13:magnetron%20sputtering
n4:kontrolniKodProRIV
[9368EC059E4B]
n4:mistoKonaniAkce
Praha
n4:mistoVydani
Stafa-Zurich
n4:nazevZdroje
Key Engineering Materials
n4:obor
n19:JJ
n4:pocetDomacichTvurcuVysledku
5
n4:pocetTvurcuVysledku
5
n4:projekt
n9:ED2.1.00%2F03.0088
n4:rokUplatneniVysledku
n7:2014
n4:tvurceVysledku
Šutta, Pavol Novák, Petr Netrvalová, Marie Říha, Jan Medlín, Rostislav
n4:typAkce
n8:WRD
n4:zahajeniAkce
2013-09-13+02:00
s:issn
1013-9826
s:numberOfPages
4
n16:doi
10.4028/www.scientific.net/KEM.605.219
n3:hasPublisher
Trans Tech Publications LTD
n15:isbn
978-3-03835-051-4
n18:organizacniJednotka
23640