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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F12%3A43916616%21RIV13-MSM-23640___
rdf:type
n11:Vysledek skos:Concept
dcterms:description
Microcrystalline silicon is very important material for silicon based thin-film solar cells. It is especially convenient for tandem silicon solar cells using a-Si:H/?c-Si:H double- or triple-junction technology. Because the ?c-Si:H is a composition of amorphous and crystalline phases, its physical properties are strongly influenced by the volume content of the crystalline phase and by the hydrogen content in the films. Experimental diffraction and spectral lines are the convolution of various functions arising from the instrumental factors and specimen imperfections. The instrumental line profile is approximately Cauchy, whereas the profile arising from the lattice strain is more nearly Gaussian. The function formed from these profiles is known as a Voigt function. The films were investigated by X-ray diffraction, Raman and FTIR spectroscopies using the line profile analysis. Real structure parameters of the films (crystalline volume content, micro-strains, grain sizes, hydrogen content and distribution) carried out from the analysis indicated good agreement between the results from UV/Vis spectrophotometry and spectroscopic ellipsometry. Microcrystalline silicon is very important material for silicon based thin-film solar cells. It is especially convenient for tandem silicon solar cells using a-Si:H/?c-Si:H double- or triple-junction technology. Because the ?c-Si:H is a composition of amorphous and crystalline phases, its physical properties are strongly influenced by the volume content of the crystalline phase and by the hydrogen content in the films. Experimental diffraction and spectral lines are the convolution of various functions arising from the instrumental factors and specimen imperfections. The instrumental line profile is approximately Cauchy, whereas the profile arising from the lattice strain is more nearly Gaussian. The function formed from these profiles is known as a Voigt function. The films were investigated by X-ray diffraction, Raman and FTIR spectroscopies using the line profile analysis. Real structure parameters of the films (crystalline volume content, micro-strains, grain sizes, hydrogen content and distribution) carried out from the analysis indicated good agreement between the results from UV/Vis spectrophotometry and spectroscopic ellipsometry.
dcterms:title
Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function
skos:prefLabel
Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function
skos:notation
RIV/49777513:23640/12:43916616!RIV13-MSM-23640___
n11:predkladatel
n12:orjk%3A23640
n5:aktivita
n20:P
n5:aktivity
P(ED2.1.00/03.0088)
n5:dodaniDat
n13:2013
n5:domaciTvurceVysledku
n8:8498989 n8:1889788 n8:6890075 n8:3336751
n5:druhVysledku
n9:D
n5:duvernostUdaju
n18:S
n5:entitaPredkladatele
n19:predkladatel
n5:idSjednocenehoVysledku
150427
n5:idVysledku
RIV/49777513:23640/12:43916616
n5:jazykVysledku
n22:eng
n5:klicovaSlova
a-Si:H, ?c-Si:H, optical properties
n5:klicoveSlovo
n16:%3Fc-Si%3AH n16:optical%20properties n16:a-Si%3AH
n5:kontrolniKodProRIV
[38EC2BED45A5]
n5:mistoKonaniAkce
Frankfurt, Německo
n5:mistoVydani
München
n5:nazevZdroje
Proceedings 27th European Photovoltaic Solar Energy Conference and Exhibition
n5:obor
n6:BM
n5:pocetDomacichTvurcuVysledku
4
n5:pocetTvurcuVysledku
5
n5:projekt
n17:ED2.1.00%2F03.0088
n5:rokUplatneniVysledku
n13:2012
n5:tvurceVysledku
Prušáková, Lucie Očenášek, Jan Müllerová, Jarmila Šutta, Pavol Netrvalová, Marie
n5:typAkce
n14:EUR
n5:zahajeniAkce
2012-09-24+02:00
s:numberOfPages
5
n15:hasPublisher
WIP
n21:isbn
3-936338-28-0
n4:organizacniJednotka
23640