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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F12%3A43916611%21RIV13-MSM-23640___
rdf:type
n10:Vysledek skos:Concept
dcterms:description
In this paper, we used thermal annealing for fabrication size controlled silicon nanostructures from amorphous a-Si:H/SiO2 multilayers. A series of multilayers were deposited by PECVD using SiH4 and N2O as precursor gases. Films composed of alternating uniformly thick (20, 15, 10 and 5 nm) sublayers of a-Si:H and SiO2 were prepared on Corning glass and Si(100) substrate. Subsequently, all as-deposited multilayered films were annealed in vacuum up to 1100 °C to initialize recrystallization and formation of Si nanograins. The influence of the annealing temperature on the structural and optical properties of films were systematically studied by using XRD, FT-IR, Raman, UV-Vis spectrophotometer and ellipsometry. In FT-IR spectra, the shift of the Si-O stretching vibration to higher wavenumbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. Raman scattering spectra revealed mixed states of small crystalline grain and disordered amorphous regions. The XRD study shows the presence of nanocrystallites of silicon and their size can be precisely controlled by adjusting the thickness of a-Si:H layers. In this paper, we used thermal annealing for fabrication size controlled silicon nanostructures from amorphous a-Si:H/SiO2 multilayers. A series of multilayers were deposited by PECVD using SiH4 and N2O as precursor gases. Films composed of alternating uniformly thick (20, 15, 10 and 5 nm) sublayers of a-Si:H and SiO2 were prepared on Corning glass and Si(100) substrate. Subsequently, all as-deposited multilayered films were annealed in vacuum up to 1100 °C to initialize recrystallization and formation of Si nanograins. The influence of the annealing temperature on the structural and optical properties of films were systematically studied by using XRD, FT-IR, Raman, UV-Vis spectrophotometer and ellipsometry. In FT-IR spectra, the shift of the Si-O stretching vibration to higher wavenumbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. Raman scattering spectra revealed mixed states of small crystalline grain and disordered amorphous regions. The XRD study shows the presence of nanocrystallites of silicon and their size can be precisely controlled by adjusting the thickness of a-Si:H layers.
dcterms:title
Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications
skos:prefLabel
Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications
skos:notation
RIV/49777513:23640/12:43916611!RIV13-MSM-23640___
n10:predkladatel
n15:orjk%3A23640
n3:aktivita
n6:P
n3:aktivity
P(ED2.1.00/03.0088)
n3:dodaniDat
n5:2013
n3:domaciTvurceVysledku
n16:1072595 n16:8498989 n16:1889788 n16:6890075
n3:druhVysledku
n4:D
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n21:predkladatel
n3:idSjednocenehoVysledku
142920
n3:idVysledku
RIV/49777513:23640/12:43916611
n3:jazykVysledku
n22:eng
n3:klicovaSlova
XRD; optical properties; annealing; Si nanostructures; PECVD; a-Si:H/SiO2 multilayers
n3:klicoveSlovo
n11:XRD n11:a-Si%3AH%2FSiO2%20multilayers n11:annealing n11:Si%20nanostructures n11:optical%20properties n11:PECVD
n3:kontrolniKodProRIV
[E7E72233C4A9]
n3:mistoKonaniAkce
Florence, Italie
n3:mistoVydani
Bratislava
n3:nazevZdroje
Progress in Applied Surface, Inteface and Thin Film Science 2012, SURFINT -SREN III
n3:obor
n9:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:projekt
n14:ED2.1.00%2F03.0088
n3:rokUplatneniVysledku
n5:2012
n3:tvurceVysledku
Netrvalová, Marie Šutta, Pavol Calta, Pavel Prušáková, Lucie
n3:typAkce
n13:WRD
n3:zahajeniAkce
2012-05-14+02:00
s:numberOfPages
2
n19:hasPublisher
Univerzita Komenského v Bratislave
n18:isbn
978-80-223-3212-5
n20:organizacniJednotka
23640