This HTML5 document contains 49 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
n22http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n20http://localhost/temp/predkladatel/
n5http://purl.org/net/nknouf/ns/bibtex#
n17http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n6http://linked.opendata.cz/resource/domain/vavai/projekt/
n13http://linked.opendata.cz/resource/domain/vavai/subjekt/
n12http://linked.opendata.cz/ontology/domain/vavai/
n14http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F49777513%3A23640%2F12%3A43915256%21RIV13-MSM-23640___/
n21https://schema.org/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n11http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n19http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n16http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n4http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F12%3A43915256%21RIV13-MSM-23640___
rdf:type
skos:Concept n12:Vysledek
dcterms:description
In this paper the possibility to form ultra-thin homogenous films doped by Ga (ZnO:Ga) by continual or sequential sputtering is presented. An influence of post-deposition annealing on crystalline structure of films was studied. The ability to create a highly consistent coverage (shell) of three dimensional nanostructures (GaP nanowires) by the sequential mode of sputtering was proven. In this paper the possibility to form ultra-thin homogenous films doped by Ga (ZnO:Ga) by continual or sequential sputtering is presented. An influence of post-deposition annealing on crystalline structure of films was studied. The ability to create a highly consistent coverage (shell) of three dimensional nanostructures (GaP nanowires) by the sequential mode of sputtering was proven.
dcterms:title
Preparation of Shell nanocrystalline Ga-doped ZnO Ultra-Thin Films by Sputtering Preparation of Shell nanocrystalline Ga-doped ZnO Ultra-Thin Films by Sputtering
skos:prefLabel
Preparation of Shell nanocrystalline Ga-doped ZnO Ultra-Thin Films by Sputtering Preparation of Shell nanocrystalline Ga-doped ZnO Ultra-Thin Films by Sputtering
skos:notation
RIV/49777513:23640/12:43915256!RIV13-MSM-23640___
n12:predkladatel
n13:orjk%3A23640
n3:aktivita
n16:P
n3:aktivity
P(ED2.1.00/03.0088)
n3:dodaniDat
n4:2013
n3:domaciTvurceVysledku
n17:8498989 n17:1889788
n3:druhVysledku
n7:D
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
161361
n3:idVysledku
RIV/49777513:23640/12:43915256
n3:jazykVysledku
n9:eng
n3:klicovaSlova
sequential sputtering; consistent coverage; ultra-thin films; ZnO:Ga
n3:klicoveSlovo
n11:sequential%20sputtering n11:ultra-thin%20films n11:consistent%20coverage n11:ZnO%3AGa
n3:kontrolniKodProRIV
[E2857921EF2F]
n3:mistoKonaniAkce
Niš
n3:mistoVydani
Niš
n3:nazevZdroje
Proceedings of 28th INTERNATIONAL CONFERENCE ON MICROELETRONICS
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
7
n3:projekt
n6:ED2.1.00%2F03.0088
n3:rokUplatneniVysledku
n4:2012
n3:tvurceVysledku
Šutta, Pavol Netrvalová, Marie Tvarožek, Vladimír Eliáš, Peter Novotný, Ivan Vávra, Ivo Novák, Jozef
n3:typAkce
n22:WRD
n3:wos
000309119600056
n3:zahajeniAkce
2012-05-13+02:00
s:numberOfPages
3
n5:hasPublisher
Electron Devices Society of the Institute of Electrical and Electronics Engineers, INC.
n21:isbn
978-1-4673-0235-7
n20:organizacniJednotka
23640