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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F12%3A43897333%21RIV13-MSM-23640___
rdf:type
n13:Vysledek skos:Concept
dcterms:description
Zinc oxide ?lms doped by gallium were deposited using RF diode sputtering from a ceramic ZnO + 2% Ga2O3 target on Corning glass in argon atmosphere. Samples were supported in three different positions against a substrate holder e horizontal, and at 60 and 80° to the horizontal position. Two series of samples 700-1000 nm in thickness were prepared: one at room temperature (RT) and the second at 200°C. XRD, optical and electrical experiments indicated that the ?lms are polycrystalline having average crystallite sizes from 30 to 80 nm, integrated transmittances in the range of 400-1000 nm increased from 85 to 90 percent and optical band-gap values increased from 3 to 3.2 eV with higher deposition temperature. The resistivity of the obliquely sputtered samples positioned at 80° to the substrate holder was one order lower than the horizontally positioned samples. No signi?cant changes were observed in case of optical properties of the ?lms in dependence on the tilt-angle. Zinc oxide ?lms doped by gallium were deposited using RF diode sputtering from a ceramic ZnO + 2% Ga2O3 target on Corning glass in argon atmosphere. Samples were supported in three different positions against a substrate holder e horizontal, and at 60 and 80° to the horizontal position. Two series of samples 700-1000 nm in thickness were prepared: one at room temperature (RT) and the second at 200°C. XRD, optical and electrical experiments indicated that the ?lms are polycrystalline having average crystallite sizes from 30 to 80 nm, integrated transmittances in the range of 400-1000 nm increased from 85 to 90 percent and optical band-gap values increased from 3 to 3.2 eV with higher deposition temperature. The resistivity of the obliquely sputtered samples positioned at 80° to the substrate holder was one order lower than the horizontally positioned samples. No signi?cant changes were observed in case of optical properties of the ?lms in dependence on the tilt-angle.
dcterms:title
In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms
skos:prefLabel
In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms
skos:notation
RIV/49777513:23640/12:43897333!RIV13-MSM-23640___
n13:predkladatel
n17:orjk%3A23640
n4:aktivita
n12:P
n4:aktivity
P(1M06031), P(ED2.1.00/03.0088)
n4:cisloPeriodika
6
n4:dodaniDat
n9:2013
n4:domaciTvurceVysledku
n7:1889788 n7:8498989 n7:6890075
n4:druhVysledku
n8:J
n4:duvernostUdaju
n18:S
n4:entitaPredkladatele
n19:predkladatel
n4:idSjednocenehoVysledku
142809
n4:idVysledku
RIV/49777513:23640/12:43897333
n4:jazykVysledku
n20:eng
n4:klicovaSlova
optical properties; structural properies; ZnO:Ga, oblique sputttering
n4:klicoveSlovo
n11:oblique%20sputttering n11:structural%20properies n11:optical%20properties n11:ZnO%3AGa
n4:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n4:kontrolniKodProRIV
[C6A7A2ED576D]
n4:nazevZdroje
Vacuum
n4:obor
n6:BM
n4:pocetDomacichTvurcuVysledku
3
n4:pocetTvurcuVysledku
5
n4:projekt
n5:1M06031 n5:ED2.1.00%2F03.0088
n4:rokUplatneniVysledku
n9:2012
n4:svazekPeriodika
86
n4:tvurceVysledku
Netrvalová, Marie Tvarožek, Vladimír Novotný, Ivan Prušáková, Lucie Šutta, Pavol
s:issn
0042-207X
s:numberOfPages
4
n10:doi
10.1016/j.vacuum.2011.07.064
n14:organizacniJednotka
23640